Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements

Henry H. Radamson received an M.Sc. degree in physics and the Ph.D. degree in semiconductor materials from Linköping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology in Stockholm as a senior scientist, where he has been an Associate Professor since 2001. Lars Thylén received the M. Sc. degree in Electrical Engineering and the Ph. D. degree in Applied Physics in 1972 and 1982, respectively, both from the Royal Institute of Technology (KTH) in Stockholm. From 1982 to 1992 he was employed by Ericsson. Since 1992, he is a professor of Photonics and Microwave Engineering at the school of Information and Communications Technology, KTH, Stockholm, heading the Laboratory of Photonics and Microwave Engineering.

• Introduction: Scope and purpose of the book 1. Metal oxide semiconductor field effect transistorsPart one The basics of Metal oxide semiconductor field effect transistorsPart two: Strain engineering in group IV materials Part three: Chemical vapor deposition (CVD) of group IV materialsPart four: Improvement of the channel mobility2. Basics of integrated photonics 3. Silicon and group IV photonicsPart One: Silicon photonic elements for integrated photonics Part two: Bandgap engineering in group IV materials for photonic applicationPart three: Group IV-based detectors and lasersPart four: Graphene, new photonic material4. Moore’s law for photonics and electronics5. Approaches for monolithic integration of group IV based photonics and electronics circuits, current status and visions for the future Part one: Light emitting sources in Si as photonic materialPart two: Competing and complementing technologies and materials to an all group IV based photonics approachAuthors’ final words