Metal Oxides for Non-volatile Memory

Materials, Technology and Applications

AvPanagiotis Dimitrakis,Ilia Valov

Häftad, Engelska, 2022

Del i serien Metal Oxides

2 437 kr

Beställningsvara. Skickas inom 10-15 vardagar. Fri frakt över 249 kr.

Beskrivning

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory.

Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.

Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more
Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE
Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Produktinformation

Utgivningsdatum:2022-03-03
Mått:152 x 229 x undefined mm
Vikt:860 g
Format:Häftad
Språk:Engelska
Serie:Metal Oxides
Antal sidor:536
Förlag:Elsevier Science
ISBN:9780128146293

Utforska kategorier

Mer om författaren

Panagiotis Dimitrakis is a Senior Researcher, Cleanroom Facility Manager in the Institute of Nanoscience and Nanotechnology, Greece. Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany. Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 – 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology.

Innehållsförteckning

1. Introduction to non-volatile memory2. Resistive switching in metal-oxide memristive materials and devices3. Charge trapping NVMs with metal oxides in the memory stack4. Technology and neuromorphic functionality of magnetron-sputtered memristive devices5. Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship6. MOx materials by ALD method7. Nano-composite MOx materials for NVMs8. MOx in ferroelectric memories9. “Metal oxides in magnetic memories: Current status and future perspectives10. Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications11. The effect of external stimuli on the performance of memristive oxides12. MOX for NVM on graphene and 2D materials13. Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission14. Neuromorphic applications using MOx-based memristors