Advances in Imaging and Electron Physics

Dr Martin Hÿtch, serial editor for the book series “Advances in Imaging and Electron Physics (AIEP)”, is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on “Quantitative high-resolution transmission electron microscopy (HRTEM)”, joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops. Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peterhouse and of Churchill College. From 1959 – 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Microscopy and Optical Societies of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.

• Part 1: Quantum degeneracy1. Partially coherent quantum degenerate electron matter wavesSam Keramati, Eric Jones, Jeremy Armstrong, Herman BatelaanPart 2: The contribution of atom probe tomography to the correlation of the optical and structural properties of semiconductor nanostructures2. Laser-assisted atom probe tomographyLorenzo Rigutti3. Inaccuracies in atom probe measurements of semiconductor compositionLorenzo Rigutti4. Atom probe-based correlative microscopyLorenzo Rigutti5. In-situ optical spectroscopy within an atom probeLorenzo RiguttiPart 3: CPO Proceedings Papers6. Derivation, Cross-Validation, and Comparison of Analytic Formulas for Electrostatic Deflector AberrationsEremey Valetov, Martin Berz7. Analysis and Fringe Field Scaling of a Legacy Set of Electrostatic Deflector Aberration FormulasEremey ValetovPart 4: Advances in Optical Electron Microscopy8. Scanning Optical MicroscopyC. J. R. Sheppard