Low-Dimensional Nitride Semiconductors

Inbunden, Engelska, 2002

Del 9 i serien Series on Semiconductor Science and Technology

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Beskrivning

Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnetic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printers and CD drives. Ultraviolet detectors will be used at a wide scale for many applications, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty first century.

Produktinformation

Utgivningsdatum:2002-06-20
Mått:163 x 241 x 31 mm
Vikt:977 g
Format:Inbunden
Språk:Engelska
Serie:Series on Semiconductor Science and Technology
Antal sidor:486
Förlag:OUP OXFORD
ISBN:9780198509745

Utforska kategorier

Mer om författaren

Dr Bernard Gil, Goupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case Courier 074, F-34095 Montpellier Cedex 5, France. Tel: +33 4 67 14 39 24, Fax: +33 4 67 14 37 60. Email: gil@ges.univ-montp.fr

Recensioner i media

For the immediate future this volume will serve very well those who need to gain insights into specific aspects of nitride materials physics. The dynamic range of the contributions should ensure that most interested readers will find a viewpoint that coincides with their own requirements.

Innehållsförteckning

1. Gallium nitride or The history of a scientific explosion driven by applications and markets ; 2. Nitrides as seen by a theorist ; 3. The homoepitaxial challenge for low-dimensional nitrides ; 4. HVPE - GaN quasi-substrates for nitride device structures ; 5. Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control ; 6. The growth of low-dimensional nitrides by molecular beam epitaxy ; 7. Topological defects and low-dimensional nitride layers ; 8. Excitons in GaN-based low-dimensional systems ; 9. Indium gallium nitride ; 10. The optical properties of InGaN-based quantum wells and quantum dots ; 11. Electron-phonon interactions in GaN and its low-dimensional structures ; 12. Low-dimensional nitrides: A laboratory for ultrafast physics ; 13. Opto-electronic devices based on low-dimensional nitride heterostructures ; 14. GaN-based modulation doped FETs ; 15. Mixed III-V-N semiconductors: A challenge for tomorrow?