Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master’s level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

• Section I Fundamentals1 III-Nitride Materials and CharacterizationBo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge2 Microstructure and Polarization Properties of III-Nitride SemiconductorsFernando A. Ponce3 Optical Properties of III-Nitride SemiconductorsPlamen P. Paskov and Bo Monemar4 Electronic and Transport Properties of III-Nitride SemiconductorsYuh-Renn WuSection II Growth and Processing5 Growth Technology for GaN and AlN Bulk Substrates and TemplatesMichael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova6 III-Nitride Metalorganic Vapor-Phase EpitaxyDaniel D. Koleske7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device ApplicationsShizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi8 Advanced Optoelectronic Device ProcessingFengyi JiangSection III Power Electronics9 Principles and Properties of Nitride-Based Electronic DevicesAn-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang10 Power Conversion and the Role of GaNSrabanti Chowdhury11 Recent Progress in GaN-on-Si HEMTKevin J. Chen and Shu Yang12 Reliability in III-Nitride DevicesDavide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico ZanoniSection IV Light Emitters13 Internal Quantum Efficiency for III-Nitride・Based Blue Light-Emitting DiodesZi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao

Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master’s level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

• Section I Fundamentals1 III-Nitride Materials and CharacterizationBo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge2 Microstructure and Polarization Properties of III-Nitride SemiconductorsFernando A. Ponce3 Optical Properties of III-Nitride SemiconductorsPlamen P. Paskov and Bo Monemar4 Electronic and Transport Properties of III-Nitride SemiconductorsYuh-Renn WuSection II Growth and Processing5 Growth Technology for GaN and AlN Bulk Substrates and TemplatesMichael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova6 III-Nitride Metalorganic Vapor-Phase EpitaxyDaniel D. Koleske7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device ApplicationsShizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi8 Advanced Optoelectronic Device ProcessingFengyi JiangSection III Power Electronics9 Principles and Properties of Nitride-Based Electronic DevicesAn-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang10 Power Conversion and the Role of GaNSrabanti Chowdhury11 Recent Progress in GaN-on-Si HEMTKevin J. Chen and Shu Yang12 Reliability in III-Nitride DevicesDavide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico ZanoniSection IV Light Emitters13 Internal Quantum Efficiency for III-Nitride・Based Blue Light-Emitting DiodesZi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao