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    1. Naturvetenskap och teknik
    2. Matematik och naturvetenskap
    3. Kemi

    Handbook of Crystal Growth

    Thin Films and Epitaxy

    AvTom Kuech

    Inbunden, Engelska, 2014

    Del i serien Handbook of Crystal Growth

    3 486 kr

    Beställningsvara. Skickas inom 5-8 vardagar. Fri frakt över 249 kr.

    Beskrivning

    Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.

    Produktinformation

    • Utgivningsdatum:2014-11-14
    • Mått:191 x 235 x undefined mm
    • Vikt:3 460 g
    • Format:Inbunden
    • Språk:Engelska
    • Serie:Handbook of Crystal Growth
    • Antal sidor:1 382
    • Upplaga:2
    • Förlag:Elsevier Science
    • ISBN:9780444633040

    Utforska kategorier

    • Kemi inom Naturvetenskap och teknik
    • Tillverkningsteknik inom Naturvetenskap och teknik

    Recensioner i media

    "...any library in the materials science or chemical engineering departments of universities should carry these volumes.... I would recommend it to academics in the crystal growth field who want to have a complete reference work they can use to ensure their students are well grounded in the fundamentals and also to industrial crystal-growers who now and then need to understand why it is that what they do actually works." -- Advanced Materials

    Innehållsförteckning

    • Volume 3A1: Epitaxy for Energy applications2: Hydride Vapor Phase Epitaxy 3: The principles and practice of organometallic vapor phase epitaxy 4: Principles of molecular beam epitaxy (Si or IIIV)5: Molecular beam epitaxy with gaseous source6: Liquid phase epitaxy7: Solid phase epitaxy8: Pulsed laser deposition9: Nanowire growth (VLS or VSS)10: Selective area masked growth (nano-to-micro)11: Templated growth and van der walls epitaxy graphoepitaxy12: Epitaxial small organic molecules13: Oxide thin films14: Epitaxy of carbon-based materials: diamond thinfilm15: Magnetic Semiconductors16: MOVPE of Nitrides (LEO)17: MBE of nitrides18: Graphene19: Chemical Vapor Deposition of Two-Dimensional CrystalsVolume 3B1: Kinetic processes in vapour phase epitaxy2: Organometallic vapor phase epitaxy reaction chemical kinetics3: Transport phenomena in vapor phase epitaxy reactors4: Nucleation and surface diffusion in molecular beam epitaxy5: Film stress and mechanics in thin film epitaxy6: Low Temperature and Metamorphic buffer layers7: Self-assembly in Epitaxial growth8: "Atomic layer or Modulated Epitaxial Growth Techniques"9: Epitaxial Growth of SiC10: In situ optical studies of epitaxial growth11: X-ray and electron diffraction12: Growth of III-V’s on Silicon:nitrides and arsenides 13: Si and Si-based alloy epitaxy