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    Advanced Semiconductor Memories

    Architectures, Designs, and Applications

    AvAshok K. Sharma

    Inbunden, Engelska, 2002

    2 446 kr

    Beställningsvara. Skickas inom 5-8 vardagar. Fri frakt över 249 kr.

    Beskrivning

    A valuable reference for the most vital microelectronic components in the marketplace DRAMs are the technology drivers of high volume semiconductor fabrication processes for new generation products that, in addition to computer markets, are finding increased usage in automotive, aviation, military and space, telecommunications, and wireless industries. A new generation of high-density and high-performance memory architectures evolving for mass storage devices, including embedded memories and nonvolatile flash memories, are serving a diverse range of applications.Comprehensive and up to date, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers professionals in the semiconductor and related industries an in-depth review of advanced semiconductor memories technology developments. It provides details on: Static Random Access Memory technologies including advanced architectures, low voltage SRAMs, fast SRAMs, SOI SRAMs, and specialty SRAMs (multiport, FIFOs, CAMs)High Performance Dynamic Random Access Memory-DDRs, synchronous DRAM/SGRAM features and architectures, EDRAM, CDRAM, Gigabit DRAM scaling issues and architectures, multilevel storage DRAMs, and SOI DRAMsApplications-specific DRAM architectures and designs - VRAMs, DDR SGRAMs, RDRAMs, SLDRAMs, 3-D RAMAdvanced Nonvolatile Memory designs and technologies, including floating gate cell theory, EEPROM/flash memory cell design, and multilevel flashFRAMs and reliability issuesEmbedded memory designs and applications, including cache, merged processor, DRAM architectures, memory cards, and multimedia applicationsFuture memory directions with megabytes to terabytes storage capacities using RTDs, single electron memories, etc.A continuation of the topics introduced in Semiconductor Memories: Technology, Testing, and Reliability, the author's earlier work, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers a much-needed reference to the major developments and future directions of advanced semiconductor memory technology.

    Produktinformation

    • Utgivningsdatum:2002-10-29
    • Mått:160 x 236 x 43 mm
    • Vikt:1 134 g
    • Format:Inbunden
    • Språk:Engelska
    • Antal sidor:672
    • Förlag:John Wiley & Sons Inc
    • ISBN:9780471208136

    Utforska kategorier

    • Elektronik och kommunikationer inom Naturvetenskap och teknik
    • Hårdvara inom Data och IT

    Mer om författaren

    ASHOK K. SHARMA is the author of Semiconductor Memories: Technology, Testing, and Reliability (Wiley-IEEE Press, 1997). He is currently working as a reliability engineering manager at NASA, Goddard Space Flight Center, Greenbelt, Maryland.

    Innehållsförteckning

    • PREFACE xix1 INTRODUCTION TO ADVANCED SEMICONDUCTOR MEMORIES 11.1. Semiconductor Memories Overview 11.2. Advanced Semiconductor Memory Developments 81.3. Future Memory Directions 16References 182 STATIC RANDOM ACCESS MEMORY TECHNOLOGIES 192.1. Basic SRAM Architecture and Cell Structures 192.1.1. SRAM Performance and Timing Specifications 212.1.2. SRAM ReadWrite Operations 232.2. SRAM Selection Considerations 262.3. High Performance SRAMs 332.3.1. Synchronous SRAMs Flow-Through 412.3.2. Zero Bus Turnaround SRAMs 432.3.3. Quad Data Rate SRAM 442.3.4. Double Data Rate SRAM 502.3.5. No-Turnaround Random Access Memory 512.4. Advanced SRAM Architectures 552.5. Low-Voltage SRAMs 612.6. BiCMOS Technology SRAMs 752.7. SOI SRAMs 792.8. Specialty SRAMs 912.8.1. Multiport RAMs 922.8.1.1. Dual-Port RAMs 922.8.1.2. Quadport™ RAMs 1012.8.2. First-In-First-Out (FIFO) Memories 1032.8.3. Content Addressable Memories (CAMs) 1112.8.3.1. Advanced Content Addressable Memories (Examples) 116References 1223 HIGH-PERFORMANCE DYNAMIC RANDOM ACCESS MEMORIES 1293.1. DRAM Technology Evolution and Trends 1293.2. DRAM Timing Specifications and Operations 1333.2.1. General Timing Specifications 1333.2.2. Memory Read Operation 1353.2.3. Memory Write Operation 1383.2.4. Read-Modify-Write Operation 1403.2.5. DRAM Refresh Operation 1413.3. Extended-Data-Out DRAMS 1453.3.1. EDO DRAM (Example) 1453.4. Enhanced DRAM (EDRAM) 1463.5. Synchronous DRAMGRAM Architectures 1503.5.1. SDR SDRAMSGRAM 1503.5.2. DDR SDRAMSGRAM Features 1513.5.3. Synchronous DRAM 256Mb (Example) 1543.5.3.1. Initialization 1543.5.3.2. Register Definition 1553.5.3.3. Commands 1573.5.3.4. SDRAM Operations 1593.6. Enhanced Synchronous DRAM (ESDRAM) 1633.7. Cache DRAM (CDRAM) 1663.8. Virtual Channel Memory (VCM) DRAMs 1723.9. Advaned DRAM Technology Perspectives 1753.9.1. Memory Capacitor Cell Improvements 1793.9.2. 64-Mb DRAMs 1883.9.3. 256-Mb DRAMs 1953.10. Gigabit DRAM Scaling Issues and Architectures 2003.11. Multilevel Storage DRAMs 2173.12. SOI DRAMs 221References 2314 APPLICATION-SPECIFIC DRAM ARCHITECTURES AND DESIGNS 2374.1. Video RAMs (VRAMs) 2414.2. Synchronous Graphic RAMs (SGRAMs) 2444.2.1. 64-Mb DDR SGRAM 2464.2.2. 256-Mb DDR Fast Cycle RAM 2534.3. Rambus Technology Overview 2574.3.1. Direct RDRAM Technologies and Architectures 2644.3.2. Direct Rambus Memory System-Based Designs 2724.4. Synchronous Link DRAMs (SLDRAMs) 2754.4.1. SLDRAM Standard 2774.4.2. SLDRAM Architectural and Functional Overview 2834.4.3. SLDRAM (Example) 2854.5. 3-D RAM 2964.5.1. Pixel ALU Operations 3054.6. Memory System Design Considerations 309References 3165 ADVANCED NONVOLATILE MEMORY DESIGNS AND TECHNOLOGIES 3195.1. Nonvolatile Memory Advances 3195.1.1. Introduction 3195.1.2. Serial EEPROMs 3235.1.3. Flash Memory Developments 3275.2. Floating Gate Cell Theory and Operations 3345.2.1. Floating Gate Cell Theory 3345.2.2. Charge Transport Mechanisms 3395.2.2.1. Fowler-Nordheim Tunneling 3405.2.2.2. Polyoxide Conduction 3425.2.2.3. Channel Hot-Electron Injection (CHEI) 3435.2.2.4. Direct Band-to-Band Tunneling 3475.3. Nonvolatile Memory Cell and Array Designs 3505.3.1. UV-EPROM (or EPROM) Cells 3505.3.1.1. T-Cell EPROM 3515.3.1.2. X-Cell EPROM 3515.3.1.3. Staggered Virtual Ground (SVG) Cell Array EPROM 3525.3.1.4. Alternate Metal Virtual Ground (AMG) Cell Array EPROM 3535.3.2. EEPROM Cells 3545.3.3. Flash Memory Cells 3545.3.3.1. T-Cell Flash 3555.3.3.2. Alternate Metal Ground (AMG) Flash Cell 3575.3.3.3. Source-Coupled Split-Gate (SCSG) Flash Cell 3585.3.3.4. Field-Enhancing Tunneling Injector Flash Cell 3595.3.3.5. Triple-Polysilicon Virtual Ground (TPVG) Flash Cell 3625.3.3.6. Divided Bit-Line NOR (DINOR) Flash Cell 3635.3.3.7. AND Flash Cell 3655.3.3.8. High Capacitive Coupling Ratio (HiCr) Flash Cell 3665.3.3.9. NAND Flash Cell 3665.3.4. Flash Memory Cell Basic Operation and Processes 3685.3.5. Flash EEPROM Technology Developments 3725.4. Flash Memory Architectures 3775.4.1. NOR Flash Memories 3785.4.1.1. AMD NOR Architecture Flash Memories 3815.4.1.2. Intel Flash Memories 3875.4.2. NAND Flash Memories 3925.4.2.1. AMD NAND Architecture Flash Memories 3935.4.2.2. Samsung 32M x 8-bit NAND Architecture Flash Memory 3975.4.2.3. Virtual DRAM 4015.4.3. DINOR Architecture Flash Memories 4035.4.3.1. A 16-Mb DINOR Flash Memory 4055.4.3.2. P-Channel DINOR Flash Memory 4065.4.3.3. BiNOR Cell Flash Memory 4085.4.4. AND Architecture Flash Memories 4105.4.5. Specialty Flash Memories 4115.5. Multilevel Nonvolatile Memories 4125.5.1. Multilevel NOR Flash Memories 4185.5.2. Multilevel NAND Flash Memories 4265.5.2.1. A 512-Mb NAND Flash Memory 4295.5.3. Multilevel AND Flash Memories 4295.6. Flash Memory Reliability Issues 4305.6.1. General Failure Mechanisms for EPROMsEEPROMs 4305.6.1.1. Stuck Bit 4345.6.1.2. Data Retention Degradation 4345.6.1.3. Read Time Degradation 4345.6.1.4. Erase Time Degradation 4345.6.1.5. Program Time Degradation 4345.6.1.6. Disturbs 4345.6.2. Flash Memory Reliability 4355.6.2.1. Flash Overerase 4365.6.2.2. Flash Program Disturbs 4365.6.2.3. Flash Read Disturbs 4375.6.2.4. Flash ProgramErase Endurance 4375.6.2.5. Flash Data Retention Failures 4395.6.2.6. Flash Hot Carrier Reliability Effects 4415.6.2.7. Multilevel Flash Reliability 4425.7. Ferroelectric Memories 4435.7.1. Technology Overview 4435.7.2. Ferroelectric Materials and Memory Design 4515.7.3. Megabit FRAMs 4545.7.4. Chain FRAM (CFRAM) 4635.7.5. Metal Ferroelectric Semiconductor FET 4655.7.6. FRAM Reliability Issues 467References 4696 EMBEDDED MEMORIES DESIGNS AND APPLICATIONS 4796.1. Embedded Memory Developments 4796.2. Cache Memory Designs 4876.2.1. Cache Architecture Implementation for a DSP (Example) 4956.3. Embedded SRAMDRAM Designs 4996.3.1. Embedded SRAM Macros 5036.3.1.1. A IT SRAM Macro 5046.3.1.2. A 4T SRAM Macro 5066.3.2. Embedded DRAM Macros 5086.3.2.1. dRAMASICs 5086.3.2.2. A Compiled 100-MHz DRAM Macro 5096.3.2.3. A Dual-Port Interleaved DRAM Architecture Macro 5116.3.2.4. A 1-GHz Synchronous DRAM Macro 5136.4. Merged Processor DRAM Architectures 5166.5. DRAM Processes with Embedded Logic Architectures 5226.5.1. A Modular Embedded DRAM Core 5236.5.2. Multimedia Accelerator with Embedded DRAM 5246.5.3. Intelligent RAM (IRAM) 5276.5.4. Computational RAM 5306.6. Embedded EEPROM and Flash Memories 5336.7. Memory Cards and MultiMedia Applications 5366.7.1. Memory Cards 5366.7.2. Single-Chip Flash Disk 544References 5477 FUTURE MEMORY DIRECTIONS: MEGABYTES TO TERABYTES 5497.1. Future Memory Developments 5497.2. Magnetoresistive Random Access Memories (MRAMs) 5517.2.1. MRAM Technology Developments and Tradeoffs 5517.2.2. MRAM Cells and Architectures 5567.2.3. 256K1-Mb GMRAMs 5667.2.4. Multilevel MRAMs 5717.3. Resonant Tunneling Diode-Based Memories 5727.3.1. Resonant Tuneling Diode Theory 5727.3.2. Tunneling SRAM (TSRAM) Cell Designs 5747.3.3. RTD-Based Memory System (Example) 5797.4. Single-Electron Memories 5827.4.1. Single-Electron Device Theory 5827.4.2. Single-Electron Memory Characteristics and Configurations 5907.4.3. Single-Electron Devices Fabrication Techniques 5957.4.4. Nanocrystal Memory Devices 5967.5. Phase-Change Nonvolatile Memories 6027.6. Protonic Nonvolatile Memories 6077.7. Miscellaneous Memory Technology Development (Examples) 6127.7.1. Thyristor-Based SRAM Cell (T-RAM) 6137.7.2. Content Addressable Read-Only Memory (CAROM) 6147.7.3. Nanotech Memories 6187.7.4. Solid-State Holographic Memories 618References 623INDEX 631