Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.

Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.

Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.