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    1. Naturvetenskap och teknik
    2. Teknik och industri
    3. Elektronik och kommunikationer

    Nanodevices for Integrated Circuit Design

    AvSuman Lata Tripathi,Abhishek Kumar

    Inbunden, Engelska, 2023

    2 073 kr

    Beställningsvara. Skickas inom 5-8 vardagar. Fri frakt över 249 kr.

    Beskrivning

    NANODEVICES FOR INTEGRATED CIRCUIT DESIGN Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily. Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.

    Produktinformation

    • Utgivningsdatum:2023-11-01
    • Mått:154 x 232 x 22 mm
    • Vikt:43 g
    • Format:Inbunden
    • Språk:Engelska
    • Antal sidor:304
    • Förlag:John Wiley & Sons Inc
    • ISBN:9781394185788

    Utforska kategorier

    • Elektronik och kommunikationer inom Naturvetenskap och teknik

    Mer om författaren

    Suman Lata Tripathi, PhD, is a professor at Lovely Professional University with more than 21 years of experience in academics. She has published more than 103 research papers in refereed journals and conferences. She has organized several workshops, summer internships, and expert lectures for students, and she has worked as a session chair, conference steering committee member, editorial board member, and reviewer for IEEE journals and conferences. She has published three books and currently has multiple volumes scheduled for publication from Wiley-Scrivener. Abhishek Kumar, PhD, is an associate professor at and obtained his PhD in the area of VLSI Design for Low Power and Secured Architecture from Lovely Professional University, India. With over 11 years of academic experience, he has published more than 30 research papers and proceedings in scholarly journals. He has also published nine book chapters and one authored book. He has worked as a reviewer and program committee member and editorial board member for academic and scholarly conferences and journals, and he has 11 patents to his credit. K. Srinivasa Rao, PhD, is a professor and Head of Microelectronics Research Group, Department of Electronics and Communication Engineering at the Koneru Lakshmaiah Education Foundation, India. He has earned multiple awards for his scholarship and has published more than 150 papers in scientific journals and presented more than 55 papers at scientific conferences around the world. Prasantha R. Mudimela, PhD, is a professor in the Department of Electronics and Communication Engineering, GITAM (deemed to be University), Hyderabad campus, India. He has two years of postdoc experience from the University of Namur, Belgium and KAUST, Saudi Arabia. He has over 15 years of teaching and research experience, and he has published over 45 refereed journal and conference papers.

    Innehållsförteckning

    • List of Contributors xiiiPreface xviiAcknowledgements xix1 Growth of Nano-Wire Field Effect Transistor in 21st Century 1Kunal Sinha1.1 Introduction 21.2 Initial Works on Nanowire Field-Effect-Transistors (NW-FET) 31.2(A) Theoretical and Simulation Studies on Nanowire FET (NW-FET) 41.2(B) Fabrication of Nanowire Field-Effect-Transistor (NW-FET) 101.3 Application of Nanowire Field-Effect-Transistors (NW-FET) 151.4 Conclusion 172 Impact of Silicon Nanowire-Based Transistor in IC Design Perspective 23G. Boopathi Raja2.1 Introduction 242.2 Nanoscale Devices 252.3 Nanowire Heterostructures and Silicon Nanowires 292.4 Performance Analysis of Si Nanowire with SOI FET 382.5 Conclusion 403 Kink Effect in Field Effect Transistors: Different Models and Techniques 43Abdelaali Fargi, Sami Ghedira and Adel Kalboussi3.1 Introduction 443.2 Techniques of Kink Effect 453.3 Different Models of Kink Effect 483.4 Kink Effect in MOS Capacitors 483.5 Conclusion 584 Next Generation Molybdenum Disulfide FET: Its Properties, Evaluation, and Its Applications 61Vydha Pradeep Kumar and Deepak Kumar Panda4.1 Introduction of Two-Dimensional Materials 624.2 Evaluation of 2D-Materials 644.3 Overview of MoS2 664.4 Properties of MoS2 684.5 Fabrication of MoS2 714.6 Applications of MoS2 724.7 Comparison of Other 2D Materials with MoS2 754.8 Conclusion 805 Impact of Working Temperature on the ION /IOFF Ratio of a Hetero Step-Shaped Gate TFET With Improved Ambipolar Conduction 83Bijoy Goswami, Savio Jay Sengupta, Ankur Jyoti Sarmah and Nalin Behari Dev Choudhury5.1 Introduction 845.2 Device Structure 845.3 Results and Discussion 865.4 Conclusion 896 Analysis of RF with DC and@Linearity Parameter and Study of Noise Characteristics of Gate-All-Around Junctionless FET (GAA-JLFET) and Its Applications 93Pratikhya Raut, Umakanta Nanda and Deepak Kumar Panda6.1 Introduction 946.2 Structure of GAA-JLFET 976.3 Results and Discussion 986.4 Applications 1126.5 Conclusion 1127 E-Mode-Operated Advanced III-V Heterostructure Quantum Well Devices for Analog/RF and High-Power Switching Applications 117A. Mohanbabu, N. Vinodhkumar, S. Maheswari, S. Baskaran, V. Janakiraman, M. Saravanan and P. Murugapandiyan7.1 Silicon Era and Scaling Limit 1187.2 III-V GaN-Based Compound Semiconductors 1197.3 Band-Gap Engineering 1197.4 Quantum Well 1207.5 Polarization in GaN Devices and their Specific Properties 1217.6 Strain and Lattice Mismatch in III-N Semiconductors 1237.7 High Electron Mobility Transistors (HEMTs) 1237.8 Two-Dimensional Electron Gas (2DEG) 1247.9 AlGaN/GaN Heterostructure HEMT 1257.10 Enhancement Mode GaN DH-HEMTs Device With Boron-Doped Gate Cap Layer 1297.11 High-K Gate Dielectric III-Nitride GaN MIS-HEMT Devices 1327.12 Conclusion 1378 Design of FinFET as Biosensor 143Suman Lata Tripathi and Balwinder Raj8.1 Introduction 1438.2 Existing FET Based Biosensors 1458.3 Performance Parameters of Biosensors 1498.4 FinFET Designed as Biosensor Using Visual TCAD 1498.5 Biosensors in Disease Detection 1528.6 Conclusion 1538.7 Acknowledgement 1549 Biodegradable and Flexible Electronics: Types and Applications 157Vrinda Gupta, Sachin Himalyan and Archit Sundriyal9.1 Introduction 1589.2 Biodegradable and Flexible Electronics 1609.3 Types of Materials Used for Biodegradable and Flexible Electronics 1649.4 Applications of Biodegradable and Flexible Electronic Devices 1719.5 Conclusion 17610 Novel Parameters Extraction Method of High-Speed PIN Diode for Power Integrated Circuit 181Sami Ghedira and Abdelaali Fargi10.1 Introduction 18210.2 Review of the Technology and Physics of Power PIN Diodes 18310.3 State of the Art of PIN Diode Parameters Extraction 18610.4 Proposed Method 18810.5 Validation 20510.6 Conclusion 20711 Edge AI -- A Promising Technology 211Remya R., Nalesh S. and Kala S.11.1 Introduction 21111.2 Deep Neural Networks 21311.3 Model Compression Techniques for Deep Learning 21611.4 Computing Infrastructures 22111.5 Conclusion 22312 Tunable Frequency Oscillator 227Abhishek Kumar12.1 Introduction 22712.2 Experimental Methods and Materials 23012.3 Results and Discussion 23512.4 Conclusion 24013 Introduction to Nanomagnetic Materials for Electronic Devices: Fundamental, Synthesis, Classification and Applications 243Shivani Malhotra, Mansi Chitkara, Lipika Gupta and Monika Parmar13.1 Introduction -- An Explanation of the Process and Approach 24413.2 Nanomaterials 24413.3 Synthesis and Characterization of Nano Materials 24813.4 Characterization Technique for Structural Analysis 25113.5 Magnetic Materials 25213.6 Classification of Magnetic Materials 25313.7 Magnetic Properties 25613.8 Ferrites 25813.9 Applications of Magnetic Materials 26513.10 Conclusion 268References 268About the Editors 273Index 275