Balwinder Raj, PhD, is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation. Shiromani Balmukund Rahi, PhD, is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Greater Noida, India. He has published 25 research articles, two conference proceedings, 25 book chapters for various projects, and seven books for reputed internal publishers. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs. Nandakishor Yadav, PhD, is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.

• Preface xiAcknowledgements xix1 Scaling and Challenge of Si-Based CMOS: Past, Present, and Future 1Shiromani Balmukund Rahi and Young Suh Song1.1 Introduction to Si-Based CMOS Technology 21.2 Basic Concept of Transistor Scaling 31.3 Past Challenges in Scaling Si-Based CMOS 51.4 Present Challenges and Limitations of Si-Based CMOS 71.5 Representative Methods for Scaling MOSFET 81.6 Future Prospects and Innovations in Si-Based CMOS Technology 101.7 Navigating the Evolution of Si-Based CMOS Technology 101.8 The Future of Transistors: 2D FET 121.9 Conclusion 14Acknowledgment 14References 152 Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications 27Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader2.1 Introduction 282.2 Fabrication of Gate Dielectric Layer and FeFET 302.3 Working of FeFET 322.4 Applications of FeFET Device 332.5 Summary 46Acknowledgments 47References 473 Ferroelectric Applications in Novel Devices 57Keshav Kumar and Umesh Chandra Bind3.1 Introduction 583.2 General Concepts of Ferroelectrics 593.3 Ferroelectric Materials Processing for Device Applications 603.3.1 Bulk Synthesis 603.3.1.1 Solid State Reaction Method 613.3.1.2 Coprecipitation Method 613.3.1.3 Sol–Gel Method 623.3.2 Thin Films 623.3.2.1 Chemical Vapor Deposition (CVD) 623.3.2.2 Sputtering Method 633.3.2.3 Pulsed Laser Deposition (PLD) Technique 633.3.2.4 Molecular Beam Epitaxy (MBE) 633.4 Advanced Application of Ferroelectric Materials 633.4.1 Memory Devices 643.4.2 Energy Harvester 653.4.3 Space Flight/Satellite Electronics and Other Applications 673.5 Summary and Outlook 67References 674 Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis 77Sirisha Meriga and Brinda Bhowmick4.1 Introduction 784.2 Mechanism of the Device and Method of Simulation 794.3 Results and Discussions 814.3.1 The Fundamental Nature of Polarization 814.3.2 DC Analysis 834.3.3 Analog/RF Performance 874.4 Conclusion 924.4.1 Summary 92References 935 Ferroelectric Material-Based Field Effect Transistor and Its Applications 103Avinash Kumar and Balwinder Raj5.1 Introduction 1045.1.1 What is Ferroelectricity? 1055.1.2 Effects of Temperature on Ferroelectricity 1055.2 Ferroelectric Material Properties and Advantages 1065.2.1 Common Materials for Ferroelectrics 1085.3 Ferroelectricity in Nanoelectronics 1095.3.1 HfO2 -Based Ferroelectrics in Nanodevices 1095.3.2 2D Ferro2electric Nanomaterials 1105.4 Structures of Ferroelectric FET 11125.4.1 Metal Ferroelectric Semiconductor Field-Effect Transistor 1115.4.2 Metal Ferroelectric Insulator Semiconductor Field-Effect Transistor 1125.4.3 Metal Ferroelectric Metal Insulator Semiconductor Field-Effect Transistor 1135.4.4 Dual Gate FeFET 1145.4.5 Fin FET 1145.4.6 Gate All-Around Structure 1155.5 Applications 1165.5.1 Fe-FET-Based Memory Design 1165.5.2 Fe-FET-Based Sensor Design 1185.6 Conclusion 1195.7 Future Prospects for Nanoferroelectric Devices 120Acknowledgments 120References 1216 Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology 131Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi6.1 Introduction 1326.2 Implementation of Ferroelectric Material in Tunnel FET 1336.2.1 Device Structure 1336.2.2 Device Lay-Out Information of Fe Tunnel 1346.3 Results and Analysis 1356.4 Conclusion 142References 1437 Identification of Negative Capacitance in Ferroelectric in FET Devices 155Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar7.1 Introduction 1567.2 Negative Capacitance 1577.3 NC in Ferroelectrics 1617.4 Ferroelectric Materials in Practice for NC 1647.4.1 Traditional Ferroelectric 1667.4.2 Hafnium and Zirconium-Based Ferroelectric 1667.4.3 Wurtzite Aluminum Scandium Nitride 1677.5 Evidence of NC in Ferroelectrics 1687.5.1 For the Concept of NC 1687.5.2 For Device Fabrication 1707.6 Perspectives 1727.7 Conclusion 173References 1748 Tunnel Field Effect Transistors and Their Application in Biosensors 185K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena8.1 Introduction 1868.2 What is Biosensor: Types and its Principle 1878.3 Components of Biosensors 1888.4 Application of FET in Biosensors 1898.5 How TFET Works as a Biosensor and its Structure 1908.6 Recent Structures of TFET-Based Bio-Sensors 1918.7 Conclusion 193References 1939 Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications 205Isha Arora and Rishi Kant9.1 Introduction 2069.2 Physical Characteristics of TCOs 2079.2.1 Optical Properties 2079.2.2 Electrical Properties 2109.3 Types of Transparent Conductors 2129.4 Deposition Techniques 2179.5 Sol–Gel Deposition 2209.6 Applications of TCOs 2239.7 Conclusion 227References 22810 Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring 239Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad10.1 Introduction 24010.2 Biosensors 24110.3 Characteristics of Biosensors 24410.4 Interaction Mechanism of Ferroelectric with Physical Stimuli 24510.5 Working Principle of Biosensors 24910.6 Biosensing Mechanism of Ferroelectrics 24910.7 Ferroelectrics for Biosensing 25210.8 Ferroelectrics in Health Monitoring 25310.9 Ferroelectrics for Environmental Monitoring 25710.10 Ferroelectrics for Agricultural Monitoring 25810.11 FeFET Biosensors for Monitoring 25810.12 Perspective 26310.13 Conclusions 264References 26411 Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap 275Shiromani Balmukund Rahi and Young Suh Song11.1 Introduction to Ferroelectric Application 27611.2 Ferroelectric Materials and Properties 27611.3 Basic Scaling and ITRS Roadmap 27911.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/ Drain Engineering, Local High Doping for Better Subthreshold Swing 28011.5 Nanoscale Devices with Ferroelectric Applications 28111.6 Advantages and Potential Applications of Ferroelectric Materials 28211.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap 28411.8 Possible Challenge in Future Ferroelectric Applications 28511.9 Conclusion 286References 28712 Recent Electron Mobility Models for FeFET 297Shiromani Balmukund Rahi and Young Suh Song12.1 Introduction to Electron Mobility and FeFET 29712.2 Classical Electron Mobility Models 29812.3 Quantum Mechanical Models for Electron Mobility 30012.4 Density Functional Theory (DFT) Approaches for Electron Mobility 30212.5 Empirical Electron Mobility Models and Parameter Extraction Techniques 30312.6 Challenges and Limitations in Modeling FeFET Electron Mobility 30412.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling 30612.8 Conclusion 308References 308About the Editors 319Index 321

Balwinder Raj, PhD, is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation. Shiromani Balmukund Rahi, PhD, is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Greater Noida, India. He has published 25 research articles, two conference proceedings, 25 book chapters for various projects, and seven books for reputed internal publishers. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs. Nandakishor Yadav, PhD, is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.

• Preface xiAcknowledgements xix1 Scaling and Challenge of Si-Based CMOS: Past, Present, and Future 1Shiromani Balmukund Rahi and Young Suh Song1.1 Introduction to Si-Based CMOS Technology 21.2 Basic Concept of Transistor Scaling 31.3 Past Challenges in Scaling Si-Based CMOS 51.4 Present Challenges and Limitations of Si-Based CMOS 71.5 Representative Methods for Scaling MOSFET 81.6 Future Prospects and Innovations in Si-Based CMOS Technology 101.7 Navigating the Evolution of Si-Based CMOS Technology 101.8 The Future of Transistors: 2D FET 121.9 Conclusion 14Acknowledgment 14References 152 Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications 27Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader2.1 Introduction 282.2 Fabrication of Gate Dielectric Layer and FeFET 302.3 Working of FeFET 322.4 Applications of FeFET Device 332.5 Summary 46Acknowledgments 47References 473 Ferroelectric Applications in Novel Devices 57Keshav Kumar and Umesh Chandra Bind3.1 Introduction 583.2 General Concepts of Ferroelectrics 593.3 Ferroelectric Materials Processing for Device Applications 603.3.1 Bulk Synthesis 603.3.1.1 Solid State Reaction Method 613.3.1.2 Coprecipitation Method 613.3.1.3 Sol–Gel Method 623.3.2 Thin Films 623.3.2.1 Chemical Vapor Deposition (CVD) 623.3.2.2 Sputtering Method 633.3.2.3 Pulsed Laser Deposition (PLD) Technique 633.3.2.4 Molecular Beam Epitaxy (MBE) 633.4 Advanced Application of Ferroelectric Materials 633.4.1 Memory Devices 643.4.2 Energy Harvester 653.4.3 Space Flight/Satellite Electronics and Other Applications 673.5 Summary and Outlook 67References 674 Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis 77Sirisha Meriga and Brinda Bhowmick4.1 Introduction 784.2 Mechanism of the Device and Method of Simulation 794.3 Results and Discussions 814.3.1 The Fundamental Nature of Polarization 814.3.2 DC Analysis 834.3.3 Analog/RF Performance 874.4 Conclusion 924.4.1 Summary 92References 935 Ferroelectric Material-Based Field Effect Transistor and Its Applications 103Avinash Kumar and Balwinder Raj5.1 Introduction 1045.1.1 What is Ferroelectricity? 1055.1.2 Effects of Temperature on Ferroelectricity 1055.2 Ferroelectric Material Properties and Advantages 1065.2.1 Common Materials for Ferroelectrics 1085.3 Ferroelectricity in Nanoelectronics 1095.3.1 HfO2 -Based Ferroelectrics in Nanodevices 1095.3.2 2D Ferro2electric Nanomaterials 1105.4 Structures of Ferroelectric FET 11125.4.1 Metal Ferroelectric Semiconductor Field-Effect Transistor 1115.4.2 Metal Ferroelectric Insulator Semiconductor Field-Effect Transistor 1125.4.3 Metal Ferroelectric Metal Insulator Semiconductor Field-Effect Transistor 1135.4.4 Dual Gate FeFET 1145.4.5 Fin FET 1145.4.6 Gate All-Around Structure 1155.5 Applications 1165.5.1 Fe-FET-Based Memory Design 1165.5.2 Fe-FET-Based Sensor Design 1185.6 Conclusion 1195.7 Future Prospects for Nanoferroelectric Devices 120Acknowledgments 120References 1216 Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology 131Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi6.1 Introduction 1326.2 Implementation of Ferroelectric Material in Tunnel FET 1336.2.1 Device Structure 1336.2.2 Device Lay-Out Information of Fe Tunnel 1346.3 Results and Analysis 1356.4 Conclusion 142References 1437 Identification of Negative Capacitance in Ferroelectric in FET Devices 155Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar7.1 Introduction 1567.2 Negative Capacitance 1577.3 NC in Ferroelectrics 1617.4 Ferroelectric Materials in Practice for NC 1647.4.1 Traditional Ferroelectric 1667.4.2 Hafnium and Zirconium-Based Ferroelectric 1667.4.3 Wurtzite Aluminum Scandium Nitride 1677.5 Evidence of NC in Ferroelectrics 1687.5.1 For the Concept of NC 1687.5.2 For Device Fabrication 1707.6 Perspectives 1727.7 Conclusion 173References 1748 Tunnel Field Effect Transistors and Their Application in Biosensors 185K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena8.1 Introduction 1868.2 What is Biosensor: Types and its Principle 1878.3 Components of Biosensors 1888.4 Application of FET in Biosensors 1898.5 How TFET Works as a Biosensor and its Structure 1908.6 Recent Structures of TFET-Based Bio-Sensors 1918.7 Conclusion 193References 1939 Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications 205Isha Arora and Rishi Kant9.1 Introduction 2069.2 Physical Characteristics of TCOs 2079.2.1 Optical Properties 2079.2.2 Electrical Properties 2109.3 Types of Transparent Conductors 2129.4 Deposition Techniques 2179.5 Sol–Gel Deposition 2209.6 Applications of TCOs 2239.7 Conclusion 227References 22810 Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring 239Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad10.1 Introduction 24010.2 Biosensors 24110.3 Characteristics of Biosensors 24410.4 Interaction Mechanism of Ferroelectric with Physical Stimuli 24510.5 Working Principle of Biosensors 24910.6 Biosensing Mechanism of Ferroelectrics 24910.7 Ferroelectrics for Biosensing 25210.8 Ferroelectrics in Health Monitoring 25310.9 Ferroelectrics for Environmental Monitoring 25710.10 Ferroelectrics for Agricultural Monitoring 25810.11 FeFET Biosensors for Monitoring 25810.12 Perspective 26310.13 Conclusions 264References 26411 Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap 275Shiromani Balmukund Rahi and Young Suh Song11.1 Introduction to Ferroelectric Application 27611.2 Ferroelectric Materials and Properties 27611.3 Basic Scaling and ITRS Roadmap 27911.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/ Drain Engineering, Local High Doping for Better Subthreshold Swing 28011.5 Nanoscale Devices with Ferroelectric Applications 28111.6 Advantages and Potential Applications of Ferroelectric Materials 28211.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap 28411.8 Possible Challenge in Future Ferroelectric Applications 28511.9 Conclusion 286References 28712 Recent Electron Mobility Models for FeFET 297Shiromani Balmukund Rahi and Young Suh Song12.1 Introduction to Electron Mobility and FeFET 29712.2 Classical Electron Mobility Models 29812.3 Quantum Mechanical Models for Electron Mobility 30012.4 Density Functional Theory (DFT) Approaches for Electron Mobility 30212.5 Empirical Electron Mobility Models and Parameter Extraction Techniques 30312.6 Challenges and Limitations in Modeling FeFET Electron Mobility 30412.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling 30612.8 Conclusion 308References 308About the Editors 319Index 321

Balwinder Raj, PhD, is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation. Shiromani Balmukund Rahi, PhD, is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Greater Noida, India. He has published 25 research articles, two conference proceedings, 25 book chapters for various projects, and seven books for reputed internal publishers. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs. Nandakishor Yadav, PhD, is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.

• Preface xiAcknowledgements xix1 Scaling and Challenge of Si-Based CMOS: Past, Present, and Future 1Shiromani Balmukund Rahi and Young Suh Song1.1 Introduction to Si-Based CMOS Technology 21.2 Basic Concept of Transistor Scaling 31.3 Past Challenges in Scaling Si-Based CMOS 51.4 Present Challenges and Limitations of Si-Based CMOS 71.5 Representative Methods for Scaling MOSFET 81.6 Future Prospects and Innovations in Si-Based CMOS Technology 101.7 Navigating the Evolution of Si-Based CMOS Technology 101.8 The Future of Transistors: 2D FET 121.9 Conclusion 14Acknowledgment 14References 152 Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications 27Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader2.1 Introduction 282.2 Fabrication of Gate Dielectric Layer and FeFET 302.3 Working of FeFET 322.4 Applications of FeFET Device 332.5 Summary 46Acknowledgments 47References 473 Ferroelectric Applications in Novel Devices 57Keshav Kumar and Umesh Chandra Bind3.1 Introduction 583.2 General Concepts of Ferroelectrics 593.3 Ferroelectric Materials Processing for Device Applications 603.3.1 Bulk Synthesis 603.3.1.1 Solid State Reaction Method 613.3.1.2 Coprecipitation Method 613.3.1.3 Sol–Gel Method 623.3.2 Thin Films 623.3.2.1 Chemical Vapor Deposition (CVD) 623.3.2.2 Sputtering Method 633.3.2.3 Pulsed Laser Deposition (PLD) Technique 633.3.2.4 Molecular Beam Epitaxy (MBE) 633.4 Advanced Application of Ferroelectric Materials 633.4.1 Memory Devices 643.4.2 Energy Harvester 653.4.3 Space Flight/Satellite Electronics and Other Applications 673.5 Summary and Outlook 67References 674 Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis 77Sirisha Meriga and Brinda Bhowmick4.1 Introduction 784.2 Mechanism of the Device and Method of Simulation 794.3 Results and Discussions 814.3.1 The Fundamental Nature of Polarization 814.3.2 DC Analysis 834.3.3 Analog/RF Performance 874.4 Conclusion 924.4.1 Summary 92References 935 Ferroelectric Material-Based Field Effect Transistor and Its Applications 103Avinash Kumar and Balwinder Raj5.1 Introduction 1045.1.1 What is Ferroelectricity? 1055.1.2 Effects of Temperature on Ferroelectricity 1055.2 Ferroelectric Material Properties and Advantages 1065.2.1 Common Materials for Ferroelectrics 1085.3 Ferroelectricity in Nanoelectronics 1095.3.1 HfO2 -Based Ferroelectrics in Nanodevices 1095.3.2 2D Ferro2electric Nanomaterials 1105.4 Structures of Ferroelectric FET 11125.4.1 Metal Ferroelectric Semiconductor Field-Effect Transistor 1115.4.2 Metal Ferroelectric Insulator Semiconductor Field-Effect Transistor 1125.4.3 Metal Ferroelectric Metal Insulator Semiconductor Field-Effect Transistor 1135.4.4 Dual Gate FeFET 1145.4.5 Fin FET 1145.4.6 Gate All-Around Structure 1155.5 Applications 1165.5.1 Fe-FET-Based Memory Design 1165.5.2 Fe-FET-Based Sensor Design 1185.6 Conclusion 1195.7 Future Prospects for Nanoferroelectric Devices 120Acknowledgments 120References 1216 Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology 131Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi6.1 Introduction 1326.2 Implementation of Ferroelectric Material in Tunnel FET 1336.2.1 Device Structure 1336.2.2 Device Lay-Out Information of Fe Tunnel 1346.3 Results and Analysis 1356.4 Conclusion 142References 1437 Identification of Negative Capacitance in Ferroelectric in FET Devices 155Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar7.1 Introduction 1567.2 Negative Capacitance 1577.3 NC in Ferroelectrics 1617.4 Ferroelectric Materials in Practice for NC 1647.4.1 Traditional Ferroelectric 1667.4.2 Hafnium and Zirconium-Based Ferroelectric 1667.4.3 Wurtzite Aluminum Scandium Nitride 1677.5 Evidence of NC in Ferroelectrics 1687.5.1 For the Concept of NC 1687.5.2 For Device Fabrication 1707.6 Perspectives 1727.7 Conclusion 173References 1748 Tunnel Field Effect Transistors and Their Application in Biosensors 185K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena8.1 Introduction 1868.2 What is Biosensor: Types and its Principle 1878.3 Components of Biosensors 1888.4 Application of FET in Biosensors 1898.5 How TFET Works as a Biosensor and its Structure 1908.6 Recent Structures of TFET-Based Bio-Sensors 1918.7 Conclusion 193References 1939 Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications 205Isha Arora and Rishi Kant9.1 Introduction 2069.2 Physical Characteristics of TCOs 2079.2.1 Optical Properties 2079.2.2 Electrical Properties 2109.3 Types of Transparent Conductors 2129.4 Deposition Techniques 2179.5 Sol–Gel Deposition 2209.6 Applications of TCOs 2239.7 Conclusion 227References 22810 Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring 239Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad10.1 Introduction 24010.2 Biosensors 24110.3 Characteristics of Biosensors 24410.4 Interaction Mechanism of Ferroelectric with Physical Stimuli 24510.5 Working Principle of Biosensors 24910.6 Biosensing Mechanism of Ferroelectrics 24910.7 Ferroelectrics for Biosensing 25210.8 Ferroelectrics in Health Monitoring 25310.9 Ferroelectrics for Environmental Monitoring 25710.10 Ferroelectrics for Agricultural Monitoring 25810.11 FeFET Biosensors for Monitoring 25810.12 Perspective 26310.13 Conclusions 264References 26411 Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap 275Shiromani Balmukund Rahi and Young Suh Song11.1 Introduction to Ferroelectric Application 27611.2 Ferroelectric Materials and Properties 27611.3 Basic Scaling and ITRS Roadmap 27911.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/ Drain Engineering, Local High Doping for Better Subthreshold Swing 28011.5 Nanoscale Devices with Ferroelectric Applications 28111.6 Advantages and Potential Applications of Ferroelectric Materials 28211.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap 28411.8 Possible Challenge in Future Ferroelectric Applications 28511.9 Conclusion 286References 28712 Recent Electron Mobility Models for FeFET 297Shiromani Balmukund Rahi and Young Suh Song12.1 Introduction to Electron Mobility and FeFET 29712.2 Classical Electron Mobility Models 29812.3 Quantum Mechanical Models for Electron Mobility 30012.4 Density Functional Theory (DFT) Approaches for Electron Mobility 30212.5 Empirical Electron Mobility Models and Parameter Extraction Techniques 30312.6 Challenges and Limitations in Modeling FeFET Electron Mobility 30412.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling 30612.8 Conclusion 308References 308About the Editors 319Index 321