This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.

Produktinformation

Utgivningsdatum:2002-07-26
Mått:152 x 229 x undefined mm
Vikt:680 g
Format:Inbunden
Språk:Engelska
Antal sidor:422
Förlag:Taylor & Francis Inc
ISBN:9781560329732

Utforska kategorier

Teknik: allmänt inom Naturvetenskap och teknik

Mer om författaren

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor of the Optoelectronic Properties ofSemiconductors and Superlattices series.

Innehållsförteckning

Chapter One: Optical Spectroscopy of Highly Excited Group III-NitridesChapter Two: Optical Constraints of III-Nitrides-ExperimentsChapter Three: Optical Functions of III-Nitrides-CalculationsChapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum WellsChapter Five: Electric Fields in Polarized InGaN/GaN HeterostructuresChapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN HeterostructuresChapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN FilmsChapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties