Francis Balestra received the M.S. and Ph.D. degrees in electronics from the Institut Polytechnique, Grenoble, France, in 1982 and 1985, respectively.  F. Balestra has been Director of IMEP (Institute of Microelectronics, Electromagnetism and Photonics) and previously from LPCS for a total of 10 years. He is now Director of the Sinano Institute (22 members from 12 European countries) devoted to the coordination of the research activities of the European academic community in the nanoelectronic field. He has coordinated European, National and Regional projects. Within FP6 and FP7, he coordinated the Sinano and Nanosil Networks of Excellence (NoE) that have represented unprecedented collaborations in Europe in the field of nanoelectronics, and is presently coordinating a European NoE of the 7th Framework Programme dealing with the study of innovative nanostructures for adding functionalities to CMOS for future nanosystems. He is a member of the European Academy of Sciences, of the Advisory Committee of the Chinese Journal of Semiconductors and Chinese Physics B and received the Blondel Medal (French SEE) in 2001. He is also member of the European ENIAC Scientific Community Council and several ENIAC/AENEAS Working Groups. Francis Balestra has coauthored over 130 publications in international scientific journals, 240 communications at international conferences (more than 70 invited papers and review articles), and 20 books or chapters.

• ACKNOWLEDGMENTS ixGENERAL INTRODUCTION xiFrancis BALESTRAINTRODUCTION TO VOLUME 2: SILICON NANOWIRE BIO-CHEMICAL SENSORS 1Francis BALESTRACHAPTER 1. SMALL SLOPE SWITCHES 5Adrian M. IONESCU and Francis BALESTRA, Kathy BOUCART, Giovanni SALVATORE and Alexandru RUSU1.1. Introduction 51.2. Tunnel FETs 61.3. Ferroelectric gate FET 141.4. Bibliography 21CHAPTER 2. NANOWIRE DEVICES 25Gérard GHIBAUDO, Sylvain BARRAUD, Mikaël CASSÉ, Xin Peng WANG, Guo Qiang LO, Dim-Lee KWONG, Marco PALA and Zheng FANG2.1. Introduction 252.2. NW for logic CMOS devices 262.2.1. NW fabrication and technology 262.2.2. Quantum simulation of NWs 372.2.3. Electrical characterization of NWs 492.3. Nano-CMOS ultimate memories 662.3.1. Overview of memory  662.3.2. NW application in the evolutive solution path 672.3.3. NW technology along the disruptive solution path 732.4. Conclusions 812.5. Acknowledgments    822.6. Bibliography 82CHAPTER 3. GRAPHENE AND 2D LAYER DEVICES FOR MORE MOORE AND MORE-THAN-MOORE APPLICATIONS 97Max C. LEMME3.1. Introduction 973.2. Graphene 983.2.1. Graphene fabrication   983.2.2. Macroscopic graphene field effect transistors 1013.2.3. Graphene nanoribbon transistors 1033.2.4. Bilayer graphene and substrate effects   1053.2.5. RF transistors 1063.2.6. Alternative graphene switches 1073.3. 2D materials beyond graphene 1083.4. Conclusions 1093.5. Acknowledgments    1103.6. Bibliography 110CHAPTER 4. NANOELECTROMECHANICAL SWITCHES 117Hervé FANET4.1. Context   1174.2. Nanorelay principles 1184.2.1. The electrostatic actuation 1194.2.2. The piezoelectrical actuation 1204.2.3. The magnetic actuation  1204.2.4. The thermal actuation 1204.3. Electrostatic nanorelay modeling and optimization  1214.3.1. Dynamic modeling 1214.3.2. Quasi-static modeling 1244.4. Technological challenges for NEMS computing 1274.4.1. Low voltage operation 1274.4.2. Reliability of contact technology 1284.5. NEMS-based architectures 1294.5.1. Conventional architectures 1294.5.2. Adiabatic architectures 1304.6. Conclusions 1314.7. Bibliography 132LIST OF AUTHORS  133INDEX 135