Transport Simulation in Microelectronics

Häftad, Engelska, 2011

Del 3 i serien Progress in Numerical Simulation for Microelectronics

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Beskrivning

Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature.

Produktinformation

Utgivningsdatum:2011-09-28
Mått:152 x 229 x 14 mm
Vikt:360 g
Format:Häftad
Språk:Engelska
Serie:Progress in Numerical Simulation for Microelectronics
Antal sidor:240
Förlag:Birkhauser Verlag AG
ISBN:9783034898980

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Innehållsförteckning

Content.- 1 The Boltzmann Equation.- 1.1 The Liouville Equation.- 1.2 Rarefied Gases.- 1.3 Radiation Transport.- 1.4 Electron Transport.- 1.5 Summary.- 2 Modeling of Gas Flow.- 2.1 Typical Reactors.- 2.2 Hydrodynamic Equations.- 2.3 Near Hydrodynamic Flows.- 2.4 Transition Regime Flows.- 2.5 Free Molecular Flow.- 3 Numerical Methods for Rarefied Gas Dynamics.- 3.1 Direct Simulation Monte Carlo.- 3.2 Computing Results.- 3.3 Extensions.- 3.4 Simplified Flows.- 4 Gas Transport Simulations.- 4.1 Near Hydrodynamic Effects.- 4.2 UHV-CVD Reactor.- 4.3 Sputtering Reactors.- 5 Modeling of Radiative Heat Transfer.- 5.1 Rapid Thermal Processing.- 5.2 Semi-transparent Materials.- 5.3 Optical Properties of Surfaces.- 5.4 Solution of the Integral Equation.- 5.5 The Rendering Equation.- 6 Monte Carlo for Radiation Transport.- 6.1 Monte Carlo Solution Procedure.- 6.2 Quasi-Monte Carlo Methods.- 6.3 Coupling Radiation and Gas Transport.- 7 Radiation Transport Simulations.- 7.1 Case Study of an RTP Reactor.- 7.2 Scalar Control RTCVD-reactor.- 7.3 Multi-variable Control RTCVD-reactor.- 8 Modeling of Charge Transport.- 8.1 Numerical Methods for Linear Transport.- 8.2 Further Comparisons.- A Monte Carlo Methods.- References.