Single Element Semiconductors

Yi Shi has been a Changjiang Professor at Nanjing University since 2006. He has published extensively on advanced electronic and optoelectronic materials and devices as well as on nanotechnology. Currently, his research interests are focused on nanostructured materials and the applications in optoelectronics. Shancheng Yan joined Nanjing University of Posts and Telecommunications as a Professor in May 2010. His research interests focus on novel nanomaterials, controlled synthesis, characterization, assembly, and their biological/optoelectronic applications.

• Preface xiI Carbon 11.1 Introduction 11.2 Fabrication of Carbon Nanomaterials 21.2.1 Graphene 21.2.1.1 Top-down Methods 31.2.1.2 Bottom-up Methods 81.2.2 Carbon Nanotubes 91.2.2.1 Arc Discharge 111.2.2.2 Laser Ablation 121.2.2.3 Chemical Vapor Deposition 121.2.3 Graphyne 131.2.3.1 Liquid-phase Synthesis 151.2.3.2 Solid-phase Synthesis 171.3 Properties and Applications of Carbon Nanomaterials 171.3.1 Graphene 171.3.1.1 Electrical Properties and Applications 181.3.1.2 Optoelectronic Properties and Applications 201.3.1.3 Spintronic Properties 231.3.1.4 Superconductive Properties 231.3.2 Carbon Nanotubes 251.3.3 Graphyne 301.4 Conclusion 30References 31II Silicon 412.1 Introduction 412.2 Synthesis of Si NWs 422.2.1 Fundamental Aspects and Morphology Analysis of VLS Growth 432.2.1.1 The Process of Patterning Metal NPs 442.2.1.2 The Process of Silicon Transportation 452.2.1.3 Catalysts 472.2.2 Morphology Analysis for VLS or VSS Methods 512.2.2.1 Control of Diameter and Growth Direction 522.2.2.2 Diameter Stability 522.2.2.3 Contact Angle, Infiltration, and Base Exbandation 532.2.3 Oxide-assisted Growth 552.2.3.1 Development of OAG Theory 552.2.3.2 VLS or SLS: A Discussion of Precursor States in the Heat Pipes 552.2.3.3 Characterization of OAG NWs 572.2.3.4 OAG Growth on Substrate 572.2.4 Thermal Annealing of Silicon Substrates 582.2.5 Dissolution-based Methods 592.2.6 Etching Methods 602.2.6.1 Reactive Ion Etching and Dry Etching 602.2.6.2 Metal-assisted Chemical Etching 602.3 Horizontal Si NWs: Self-assembly or In-plane Epitaxy 612.3.1 Growth-assembly Methods 612.3.1.1 Fluid Alignment Strategy 612.3.1.2 Langmuir–Blodgett Assembly Strategy 612.3.1.3 Dielectrophoresis of NWs 612.3.1.4 Printing 622.3.1.5 Blown Bubble Film Method 622.3.2 In Situ Growth of Lateral NWs 622.4 Applications of Si NWs 632.4.1 Si NW Solar Cells 632.4.1.1 Principle and Structure of Si NW Solar Cells 642.4.1.2 Si NW Solar Cell Performance Improvements 672.4.1.3 Passivation of Si NW Solar Cells 692.4.2 Si NW-based Anode Materials for Lithium Batteries 712.4.3 Thermoelectric Generators 732.4.3.1 Si NW-based TEGs 742.4.3.2 On-chip Integration of Si NW-based Thermoelectric Modules 762.4.4 Electronics of Si NWs 762.4.4.1 Properties of Si NWs 772.4.4.2 Si NW-based Field Effect Transistors 802.4.4.3 Fabrication of Si NW Transistors 86References 94III Germanium 1113.1 Introduction 1113.2 Synthesis of Germanium Nanomaterials 1123.2.1 Laser Ablation 1123.2.2 SFLS Method 1133.2.3 Thermal Evaporation 1153.2.4 Chemical Vapor Deposition 1163.2.5 Hydrothermal Synthesis 1193.3 Properties and Applications of Germanium Nanomaterials 1203.3.1 Optical Properties 1203.3.2 Raman Spectrum 1223.3.3 Energy Storage Applications 1243.3.4 Field Effect Transistor 1283.4 Conclusion 131References 131IV Phosphorus 1394.1 Introduction 1394.2 Synthesis of BP 1394.2.1 High Pressure 1404.2.2 Ball Milling 1414.2.3 Mineralization 1414.3 Synthesis of BP Nanosheets 1424.3.1 “Top-down” Approach 1424.3.1.1 Mechanical Exfoliation Method 1424.3.1.2 Electrochemical Stripping 1434.3.1.3 Liquid-phase Stripping 1444.3.2 “Bottom-up” Approach 1444.3.2.1 Chemical Vapor Deposition 1444.3.2.2 Solvothermal 1464.4 Properties of BP 1464.4.1 Lattice Structure of BP 1464.4.2 Energy Band Structure of BP 1474.4.3 Anisotropy of BP 1474.5 Applications of BP 1484.5.1 Photodetector 1484.5.2 Field Effect Transistor 1524.5.3 Solar Cell 1534.5.4 Biomedical and Sensing 1554.5.5 Photocatalytic Degradation 1574.6 Blue Phosphorus 1594.7 Violet Phosphorus 1604.8 Conclusion 161References 161V Tellurium 1695.1 Introduction 1695.2 Controlled Synthesis of Tellurium Nanomaterials 1705.2.1 0D Tellurium Nanomaterial Synthesis 1705.2.2 Controllable Synthesis of 1D Tellurium Nanostructures 1705.2.2.1 Controlled Synthesis of Tellurium NWs 1715.2.2.2 Controlled Synthesis of Tellurium Nanotubes 1725.2.2.3 Controlled Synthesis of Tellurium Nanoribbons 1745.2.3 Synthesis of 2D Tellurium Nanostructures 1755.2.3.1 Gas-phase Deposition 1755.2.3.2 Hydrothermal Synthesis 1755.2.3.3 vdW Epitaxy 1775.2.3.4 Liquid-phase Stripping 1775.2.4 Synthesis of Chiral Tellurium Nanomaterials 1775.3 Properties and Applications of Tellurium Nanostructures 1795.3.1 Electrical Property 1795.3.2 Photoconductive Properties 1815.3.3 Piezoelectric Thermoelectric Properties 1835.3.4 Chiral Properties 1845.3.5 Gas Sensing 1865.3.6 Chemical Templates 1875.3.7 Batteries 1895.4 Conclusion 191References 191VI Selenium 1996.1 Introduction 1996.2 Synthesis of Selenium Nanomaterials 2006.2.1 Synthesis of 0D Selenium Nanostructures 2006.2.2 Synthesis of 1D Selenium Nanostructures 2036.2.2.1 Synthesis of Selenium NWs 2036.2.2.2 Synthesis of Selenium Nanotubes 2066.2.2.3 Synthesis of Selenium Nanorods 2086.2.2.4 Synthesis of Selenium Nanobelts 2096.2.3 Synthesis of 2DSelenium Nanostructures 2116.3 Properties and Applications of Selenium Nanostructures 2126.3.1 Optical Properties 2136.3.2 Raman Spectroscopy 2146.3.3 Photoluminescence 2156.3.4 Electronics/Optoelectronics 2166.3.5 Energy Storage and Conversion 2196.3.6 Biological Applications 2206.4 Conclusion 222References 222VII Borophene, Stanene, Arsenene, and Antimonene 2317.1 Introduction 2317.2 Borophene 2327.2.1 Preparation of Borophene 2327.2.2 Properties and Applications of Borophene 2347.3 Stanene 2377.3.1 Preparation of Stanene 2377.3.2 Properties and Applications of Stanene 2387.4 Arsenene and Antimonene 2417.4.1 Preparation of Arsenene and Antimonene 2417.4.2 Properties and Applications of Arsenene and Antimonene 2427.5 Conclusion 244References 245Index 249