Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference

Inbunden, Engelska, 1998

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Proceedings of the 8th International Conference, Shanghai, China, 21-24 April 1997.

Materials and related physics: Magnetic field and dimensionality induced population effects in HgSe and HgSe:Fe, O. Portugall et al; Growth and in situ scanning tunnelling microscopy studies of IV-VI semiconductors (abstract), G Springholz. Detectors and arrays: China's satellite project for Earth observation and infrared detection, D-B Kuang; Recent progress in Quantum well infrared photodetectors and focal plane arrays for LWIR imaging applications, S.S. Li. Infrared lasers: Mid-infrared resonant-cavity-based devices - of detectors and emitters, J. Bleuse et al; W lasers of the Mid-IR, J.R. Meyer et al. Devices and related physics: Optoelectronic devices from indium aluminium antimonide and mercury cadmium telluride. T. Ashley; Three-terminal superconductor-semiconductor devices, H. Takayanagi, T. Akazaki. Physics: Coherent anti-stokes Raman scattering in diluted magnetic IV-VI epilayers and superlattices, H. Pascher et al; High field cyclotron resonance in GaSb and effective mass at the Gamma and L-points, H Arimoto et al. Quantum Dots: Growth and characterization of InAs Quantum Dots, N.N. Ledentsov; Self-assembled InAs Quantum Boxes - growth, intrinsic properties, potential applications (abstract), J.M. Gerard. (Part contents).