This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.

This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.

This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.