Since the advent of planar technology the literature on semi­ conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character­ ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.

During the past decade, dramatic advances have been made in computer technology. These advances are primarily as a result of the tremendous progress in semiconductor technology, paced by planar processing and LSI. Great strides have also been made in mass storage media, such as: magnetic recording, bubble domains, charge-coupled devices, beam-addressed storage, and optical storage. The mini- and microcomputer revolution has led to a major broadening of the computer industry's horizons and applications. Many writers have speculated on further progress in the coming years; other have discussed the ultimate limits to further progress in integrated electronic circuits towards higher complexity, smaller size, and improved performance. This book is a comprehensive bibliography of world literature in computer technology. It is compiled to assist the workers in the field to compare their work with that done by others. The book is divided into four chapters designated A, B, C, and D. These chapters contain the literature on logic, random-accessed memories, serial and block-oriented memories (mass storage), and microprocessors/ microcomputers, respectively. Every chapter cites a number of books and review articles; the review articles are selected to lead the reader to the topic of that chapter. For easy access to the needed references, each chapter is divided into many sections and subsections (see Contents). A comprehensive subject index is also given to assure easy access to the needed data. The literature on the fabri­ cation technology and properties of semiconducting devices is the subject of a previous book (Al) by the author.

Microelectronic packaging protects and supports electronic devices and circuits and provides connections to the other parts of the system. The protection function avoids mechanical, electrical, chemical, contamination, and photo-optical damage, degeneration, and causes of malfunction. Hybrid microelectronic circuits and subsystem packages support the substrates; the substrate contains the circuit elements, (semiconductor devices or IC chips, deposited or chip resistors and capacitors, and attached inductors), as well as deposited and bonded interconnection wires. The connections to other parts of the system include electrical leads, heat removal paths, and mounting functions. At present, in order to meet the demands of VLSI, the emphasis is on packages with higher densities while maintaining performance, reliability, and low cost. This book is a comprehensive bibliography of over 3000 refer­ ences of the world literature in microelectronic packaging. It is compiled to assist the workers in the field in comparing their work with that done by others. For easy access to the needed references, the book is divided into many sections and subsections (see Contents). A comprehensive subject index is also given to assure easy access to the needed data. The book cites a number of books and review articles for the beginner in the field who wishes to become familiar with the subject. Novel technologies, such as bubble domain and multilayer ceramic packaging are highlighted. The literature from January 1976 to December 1978 is covered.

The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc­ cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.

Since the advent of planar technology the literature on semi­ conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character­ ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.

During the past decade, dramatic advances have been made in computer technology. These advances are primarily as a result of the tremendous progress in semiconductor technology, paced by planar processing and LSI. Great strides have also been made in mass storage media, such as: magnetic recording, bubble domains, charge-coupled devices, beam-addressed storage, and optical storage. The mini- and microcomputer revolution has led to a major broadening of the computer industry's horizons and applications. Many writers have speculated on further progress in the coming years; other have discussed the ultimate limits to further progress in integrated electronic circuits towards higher complexity, smaller size, and improved performance. This book is a comprehensive bibliography of world literature in computer technology. It is compiled to assist the workers in the field to compare their work with that done by others. The book is divided into four chapters designated A, B, C, and D. These chapters contain the literature on logic, random-accessed memories, serial and block-oriented memories (mass storage), and microprocessors/ microcomputers, respectively. Every chapter cites a number of books and review articles; the review articles are selected to lead the reader to the topic of that chapter. For easy access to the needed references, each chapter is divided into many sections and subsections (see Contents). A comprehensive subject index is also given to assure easy access to the needed data. The literature on the fabri­ cation technology and properties of semiconducting devices is the subject of a previous book (Al) by the author.

Microelectronic packaging protects and supports electronic devices and circuits and provides connections to the other parts of the system. The protection function avoids mechanical, electrical, chemical, contamination, and photo-optical damage, degeneration, and causes of malfunction. Hybrid microelectronic circuits and subsystem packages support the substrates; the substrate contains the circuit elements, (semiconductor devices or IC chips, deposited or chip resistors and capacitors, and attached inductors), as well as deposited and bonded interconnection wires. The connections to other parts of the system include electrical leads, heat removal paths, and mounting functions. At present, in order to meet the demands of VLSI, the emphasis is on packages with higher densities while maintaining performance, reliability, and low cost. This book is a comprehensive bibliography of over 3000 refer­ ences of the world literature in microelectronic packaging. It is compiled to assist the workers in the field in comparing their work with that done by others. For easy access to the needed references, the book is divided into many sections and subsections (see Contents). A comprehensive subject index is also given to assure easy access to the needed data. The book cites a number of books and review articles for the beginner in the field who wishes to become familiar with the subject. Novel technologies, such as bubble domain and multilayer ceramic packaging are highlighted. The literature from January 1976 to December 1978 is covered.

The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc­ cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.