Amara Amara - Böcker

How to develop innovative architectures based on emerging molecular devices? The simple yet ambitious objective of Molecular Electronics Materials, Devices and Applications is to give the reader the necessary information to understand the challenges and opportunities of this recent field of research. In order to provide a good overview and understanding, the main molecular devices are first presented. A complete set of presentation and discussion of the actual molecular architectures follows. Nevertheless, another goal of Molecular Electronics Materials, Devices and Applications is also to promote a practical approach. As a starting point for future developments, a pragmatic methodology for VHDL-AMS device modelling and circuit design based on experimental data is then proposed. It includes an original fault tolerant memory architecture based on molecular electronics.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs).

This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs).

How to develop innovative architectures based on emerging molecular devices? The simple yet ambitious objective of Molecular Electronics Materials, Devices and Applications is to give the reader the necessary information to understand the challenges and opportunities of this recent field of research. In order to provide a good overview and understanding, the main molecular devices are first presented. A complete set of presentation and discussion of the actual molecular architectures follows. Nevertheless, another goal of Molecular Electronics Materials, Devices and Applications is also to promote a practical approach. As a starting point for future developments, a pragmatic methodology for VHDL-AMS device modelling and circuit design based on experimental data is then proposed. It includes an original fault tolerant memory architecture based on molecular electronics.

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

With the semiconductor market growth, new Integrated Circuit designs are pushing the limit of the technology and in some cases, require speci?c ?ne-tuning of certain process modules in manufacturing. Thus the communities of design and technology are increasingly intertwined. The issues that require close interactions and colla- ration for trade-off and optimization across the design/device/process ?elds are addressed in this book. It contains a set of outstanding papers, keynote and tutorials presented during 3 days at the International Conference on Integrated Circuit Design and Technology (ICICDT) held in June 2008 in Minatec, Grenoble. The selected papers are spread over ?ve chapters covering various aspects of emerging technologies and devices, advanced circuit design, reliability, variability issues and solutions, advanced memories and analog and mixed signals. All these papers are focusing on design and technology interactions and comply with the scope of the conference. v . Contents Part I Introduction 1 Synergy Between Design and Technology: A Key Factor in the Evolving Microelectronic Landscape...3Michel Brillouet Part II Emerging Technologies and Circuits 2 New State Variable Opportunities Beyond CMOS: A System Perspective ...17 Victor V. Zhirnov, Ralph K. Cavin, and George I. Bourianoff 3 A Simple Compact Model to Analyze the Impact of Ballistic and Quasi-Ballistic Transport on Ring Oscillator Performance...37 S. Martinie, D. Munteanu, G. Le Carval, and J. L. Autran Part III Advanced Devices and Circuits 4 Low-Voltage Scaled 6T FinFET SRAM Cells ...55 N. Collaert, K. von Arnim, R. Rooyackers, T.