Antonio D'Angola – författare

Plasma Modeling: Methods and applications presents and discusses the different approaches that can be adopted for plasma modeling, giving details about theoretical and numerical methods. It describes kinetic models used in plasma investigations, develops the theory of fluid equations and hybrid models, and discusses applications and practical problems across a range of fields.

This updated second edition contains over 200 pages of new material, including an extensive new part that discusses methods to calculate data needed in plasma modeling, such as thermodynamic and transport properties, state specific rate coefficients in heavy particle collisions and electron impact cross sections. This updated research and reference text is an excellent resource to assist and direct students and researchers who want to develop research activity in the field of plasma physics in the choice of the best model for the problem of interest.

Key Features:

Fundamental Aspects of Plasma Chemical Physics - Thermodynamics develops basic and advanced concepts of plasma thermodynamics from both classical and statistical points of view.

After a refreshment of classical thermodynamics applied to the dissociation and ionization regimes, the book invites the reader to discover the role of electronic excitation in affecting the properties of plasmas, a topic often overlooked by the thermal plasma community.

Particular attention is devoted to the problem of the divergence of the partition function of atomic species and the state-to-state approach for calculating the partition function of diatomic and polyatomic molecules. The limit of ideal gas approximation is also discussed, by introducing Debye-Huckel and virial corrections.

Throughout the book, worked examples are given in order to clarify concepts and mathematical approaches.

This book is a first of a series of three books to be published by the authors on fundamental aspects of plasma chemical physics.  The next books will discuss transport and kinetics.