D. B. Holt – författare

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Coca-Cola. Harley-Davidson. Nike. Budweiser. Valued by customers more for what they symbolize than for what they do, products like these are more than brands--they are cultural icons. How do managers create brands that resonate so powerfully with consumers? Based on extensive historical analyses of some of America''s most successful iconic brands, including ESPN, Mountain Dew, Volkswagen, Budweiser, and Harley-Davidson, this book presents the first systematic model to explain how brands become icons. Douglas B. Holt shows how iconic brands create "identity myths" that, through powerful symbolism, soothe collective anxieties resulting from acute social change. Holt warns that icons can''t be built through conventional branding strategies, which focus on benefits, brand personalities, and emotional relationships. Instead, he calls for a deeper cultural perspective on traditional marketing themes like targeting, positioning, brand equity, and brand loyalty--and outlines a distinctive set of "cultural branding" principles that will radically alter how companies approach everything from marketing strategy to market research to hiring and training managers. Until now, Holt shows, even the most successful iconic brands have emerged more by intuition and serendipity than by design. With How Brands Become Icons, managers can leverage the principles behind some of the most successful brands of the last half-century to build their own iconic brands. Douglas B. Holt is associate professor of Marketing at Harvard Business School.

Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.