Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.