David D. Awschalom – författare

This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge.

In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated.

Spintronics has emerged as one of the fastest growing areas of research This text presents an in-depth examination of the most recent technological spintronic developments Includes contributions from leading scholars and industry experts

This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge.In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date.Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated.- Spintronics has emerged as one of the fastest growing areas of research- This text presents an in-depth examination of the most recent technological spintronic developments- Includes contributions from leading scholars and industry experts

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and applications.  It comprises a collection of chapters from a large international team of leading researchers across academia and industry, providing readers with an up-to-date and comprehensive review of this dynamic field of research.  The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including the theory of giant magnetoresistance and an introduction to spin quantum computing.  Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrid materials including Heusler compounds, magnetic semiconductors, molecular spintronic materials, carbon nanotubes and graphene.  A separate section describesthe various methods used in the characterisation of spintronics materials, including spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third and final part of the Handbook contains chapters on spintronic device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics, and thermal effects in spintronics.  Each chapter builds from the fundamentals through to the state-of-the-art, also considering the challenges faced by researchers and containing some indication of the direction that future work in the field is likely to take.  This reference work will be an essential and long-standing resource for the spintronics community, whether in academic or industrial research.

This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and applications.  It comprises a collection of chapters from a large international team of leading researchers across academia and industry, providing readers with an up-to-date and comprehensive review of this dynamic field of research.

 

The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including the theory of giant magnetoresistance and an introduction to spin quantum computing.  Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrid materials including Heusler compounds, magnetic semiconductors, molecular spintronic materials, carbon nanotubes and graphene.  A separate section describesthe various methods used in the characterisation of spintronics materials, including spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM.

 

The third and final part of the Handbook contains chapters on spintronic device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics, and thermal effects in spintronics.

 

Each chapter builds from the fundamentals through to the state-of-the-art, also considering the challenges faced by researchers and containing some indication of the direction that future work in the field is likely to take.  This reference work will be an essential and long-standing resource for the spintronics community, whether in academic or industrial research.