G. J. Davies – författare
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2 produkter
2 produkter
Inbunden, Engelska, 1994
1 089 kr
Skickas inom 10-15 vardagar
Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.
Inbunden, Engelska, 1997
4 850 kr
Skickas inom 5-8 vardagar
Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.