G. J. Davies – författare
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2 produkter
2 produkter
1 071 kr
Skickas inom 10-15 vardagar
For the first time several different diverse but related topics concerned with semiconductor growth are brought together in a single text. Techniques used to gain information about the growing surface, a crucial condition in order to design semiconductor structures in a controllable manner, are examined before efforts are made to understand the semiconductor interface from both theoretical and experimental approaches. The fabrication and evolution of surface morphology are discussed followed by investigations of the monitoring and control of the interface. Those studying semiconductor growth from any perspective should find this book useful, and it should also be useful for all in the semiconductor industry, whether applying or manufacturing. This book should be of interest to materials scientists, electronic engineers and physicists concerned with research and development in semiconductors.
4 893 kr
Skickas inom 5-8 vardagar
Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.