Giovanni Ghione – författare

Drawing on over twenty years of teaching experience, this comprehensive yet self-contained text provides an in-depth introduction to the field of integrated microwave electronics. Ideal for a first course on the subject, it covers essential topics such as passive components and transistors, linear, low-noise and power amplifiers, and microwave measurements. An entire chapter is devoted to CAD techniques for analysis and design, covering examples of easy-to-medium difficulty for both linear and non-linear subsystems, and supported online by ADS and AWR project files. More advanced topics are also covered, providing an up-to-date overview of compound semiconductor technologies and treatment of electromagnetic issues and models. Readers can test their knowledge with end-of-chapter questions and numerical problems, and solutions and lecture slides are available online for instructors. This is essential reading for graduate and senior undergraduate students taking courses in microwave, radio-frequency and high-frequency electronics, as well as professional microwave engineers.

Providing an all-inclusive treatment of electronic and optoelectronic devices used in high-speed optical communication systems, this book emphasizes circuit applications, advanced device design solutions, and noise in sources and receivers. Core topics covered include semiconductors and semiconductor optical properties, high-speed circuits and transistors, detectors, sources, and modulators. It discusses in detail both active devices (heterostructure field-effect and bipolar transistors) and passive components (lumped and distributed) for high-speed electronic integrated circuits. It also describes recent advances in high-speed devices for 40 Gbps systems. Introductory elements are provided, making the book open to readers without a specific background in optoelectronics, whilst end-of-chapter review questions and numerical problems enable readers to test their understanding and experiment with realistic data.

The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de­ velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be­ coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound­ semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low­ frequency noise, which is relevant also in the RF and microwave ranges when­ ever it is up-converted within a nonlinear system, either autonomous (as an oscillator) or non-autonomous (as a mixer or frequency multiplier). The aim of the present book is to provide a thorough introduction to the physics-based numerical modeling of semiconductor devices operating both in small-signal and in large-signal conditions. In the latter instance, only the non-autonomous case was considered, and thus the present treatment does not directly extend to oscillators.