Isik C. Kizilyalli – författare
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9 produkter
9 produkter
Inbunden, Engelska, 2023
1 512 kr
Skickas inom 10-15 vardagar
The lack of effective DC fault protection technology remains a major barrier for the DC paradigm shift. In addressing the key challenges, Direct Current Fault Protection: Basic Concepts and Technology Advances starts with an introduction to the advantages of DC power systems before moving on to an in-depth review of DC fault protection technologies, including mechanical circuit breaker (MCB), solid-state circuit breaker (SSCB), hybrid circuit breaker (HCB), converter based (breakerless) protection, and fault current limiter (FCL). Coverage includes a comprehensive comparison of various DC fault interruption technologies and their suitable applications, state-of-the-art DC fault protection concepts and advances in research, identification of fundamental challenges and future directions in the field, and commercialization aspects. This book will be a valuable reference for practicing engineers, researchers, and graduate students in the field of power electronics andDC power systems.
E-bok
Engelska, 20231 825 kr
Läs direkt efter köp
The lack of effective DC fault protection technology remains a major barrier for the DC paradigm shift. In addressing the key challenges, Direct Current Fault Protection: Basic Concepts and Technology Advances starts with an introduction to the advantages of DC power systems before moving on to an in-depth review of DC fault protection technologies, including mechanical circuit breaker (MCB), solid-state circuit breaker (SSCB), hybrid circuit breaker (HCB), converter based (breakerless) protection, and fault current limiter (FCL). Coverage includes a comprehensive comparison of various DC fault interruption technologies and their suitable applications, state-of-the-art DC fault protection concepts and advances in research, identification of fundamental challenges and future directions in the field, and commercialization aspects. This book will be a valuable reference for practicing engineers, researchers, and graduate students in the field of power electronics andDC power systems.
631 kr
Skickas inom 5-8 vardagar
Häftad, Engelska, 2024
1 512 kr
Skickas inom 10-15 vardagar
The lack of effective DC fault protection technology remains a major barrier for the DC paradigm shift. In addressing the key challenges, Direct Current Fault Protection: Basic Concepts and Technology Advances starts with an introduction to the advantages of DC power systems before moving on to an in-depth review of DC fault protection technologies, including mechanical circuit breaker (MCB), solid-state circuit breaker (SSCB), hybrid circuit breaker (HCB), converter based (breakerless) protection, and fault current limiter (FCL). Coverage includes a comprehensive comparison of various DC fault interruption technologies and their suitable applications, state-of-the-art DC fault protection concepts and advances in research, identification of fundamental challenges and future directions in the field, and commercialization aspects. This book will be a valuable reference for practicing engineers, researchers, and graduate students in the field of power electronics andDC power systems.
Inbunden, Engelska, 2025
1 297 kr
Skickas inom 10-15 vardagar
This book presents the transformational progress in next-generation advanced converter circuit topologies based on the unique electrical properties of wide-bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN). It addresses the opportunities for significant advances in power electronics circuit performance opened by the availability of wide-bandgap power devices and the challenges associated with using these devices that must be overcome when applying them. The authors tackle specific grand challenges in application areas covering a broad range of power electronics circuits and systems disciplines, including electric motor-driven systems, automotive applications, air/rail/ship propulsion, electric vehicle chargers, high-performance computing and data centers, power supplies, solar inverters, wind-electric systems, high/medium voltage transmission/distribution equipment and power electronics interacting with the grid, power conversion for grid storage, monolithic power processing, and solid-state circuit breakers. Wide Bandgap Power Electronics: Emerging Converter Technologies and Applications introduces readers to the unique characteristics of wide-bandgap power semiconductor devices and the revolutionary impact that they are capable of having on the performance of power converters in future power electronics applications and will be an invaluable resource for practicing engineers, researchers, and graduate students in the field of power electronics, applications, and systems.
1 680 kr
Läs direkt efter köp
This book presents the transformational progress in next-generation advanced converter circuit topologies based on the unique electrical properties of wide-bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN). It addresses the opportunities for significant advances in power electronics circuit performance opened by the availability of wide-bandgap power devices and the challenges associated with using these devices that must be overcome when applying them. The authors tackle specific grand challenges in application areas covering a broad range of power electronics circuits and systems disciplines, including electric motor-driven systems, automotive applications, air/rail/ship propulsion, electric vehicle chargers, high-performance computing and data centers, power supplies, solar inverters, wind-electric systems, high/medium voltage transmission/distribution equipment and power electronics interacting with the grid, power conversion for grid storage, monolithic power processing, and solid-state circuit breakers. Wide Bandgap Power Electronics: Emerging Converter Technologies and Applications introduces readers to the unique characteristics of wide-bandgap power semiconductor devices and the revolutionary impact that they are capable of having on the performance of power converters in future power electronics applications and will be an invaluable resource for practicing engineers, researchers, and graduate students in the field of power electronics, applications, and systems.
Inbunden, Engelska, 2025
1 404 kr
Skickas inom 10-15 vardagar
This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development.The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII).This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.
E-bok
Engelska, 20251 672 kr
Läs direkt efter köp
This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development.
The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII).
This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.
Häftad, Engelska, 2026
1 404 kr
Skickas inom 10-15 vardagar
This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development.The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII).This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.