M. Schulz – författare

The advent of artificial earth satellites in 1957-58 opened a new dimension in the field of geophysical exploration. Discovery of the earth''s radiation belts, consisting of energetic electrons and ions (chiefly protons) trapped by the geomagnetic field, followed almost immediately [1,2]'' This largely unexpected development spurred a continuing interest in magnetospheric exploration, which so far has led to the launching of several hundred carefully instrumented spacecraft. Since their discovery, the radiation belts have been a subject of intensive theoretical analysis also. Over the years, a semiquantitative understanding of the governing dynamical processes has gradually evol­ ved. The underlying kinematical framework of radiation-belt theory is given by the adiabatic theory of charged-particle motion [3J, and the interesting dynamical phenomena are associated with the violation of one or more of the kinematical invariants of adiabatic motion. Among the most important of the operative dynamical processes are those that act in a stochastic manner upon the radiation-belt particles. Such stochastic processes lead to the diffusion of particle distributions with respect to the adiabatic invariants. The observational data indicate that some form of particle diffusion plays an essential role in virtually every aspect of the radiation belts.

The advent of artificial earth satellites in 1957-58 opened a new dimension in the field of geophysical exploration. Discovery of the earth's radiation belts, consisting of energetic electrons and ions (chiefly protons) trapped by the geomagnetic field, followed almost immediately [1,2]' This largely unexpected development spurred a continuing interest in magnetospheric exploration, which so far has led to the launching of several hundred carefully instrumented spacecraft. Since their discovery, the radiation belts have been a subject of intensive theoretical analysis also. Over the years, a semiquantitative understanding of the governing dynamical processes has gradually evol­ ved. The underlying kinematical framework of radiation-belt theory is given by the adiabatic theory of charged-particle motion [3J, and the interesting dynamical phenomena are associated with the violation of one or more of the kinematical invariants of adiabatic motion. Among the most important of the operative dynamical processes are those that act in a stochastic manner upon the radiation-belt particles. Such stochastic processes lead to the diffusion of particle distributions with respect to the adiabatic invariants. The observational data indicate that some form of particle diffusion plays an essential role in virtually every aspect of the radiation belts.

The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in­ cluded for the first time.

The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in­ cluded for the first time.