Magnus Willander - Böcker

Low Temperature Chemical Nanofabrication: Recent Progress, Challenges and Emerging Technologies offers a thorough and theoretical background to nanoscale fabrication phenomena, also covering important practical applications. It covers the conventional top down and the newly emerging bottom up processing methods. The latter has proven to be feasible for obtaining device quality material and can either be performed using high or low temperature processing. Low temperature (?100 oC), in particular, is becoming increasingly used due to its simplicity and varied applications, with huge benefits for developing new devices and flexible non-conventional substrates.

This important resource is ideal for researchers seeking to learn more about the fundamental theories related to nanoscale phenomena and nanofabrication.

Provides extensive coverage of nanofabrication techniques, allowing researchers to learn different nanofabrication techniques Explores different applications for low-temperature chemical nanofabrication Cogently explains how low-temperature chemical nanofabrication differs from other nanofabrication techniques, assessing the pros and cons of each

The area of high temperature electronics is a very active one. This text reviews in detail the trends and options for electronics materials in high temperature environments. Users of these materials are considered initially (e.g. aircraft and space, automotive, military, and power industries) followed by a discussion of silicon and gallium arsenide electronics. Metallization, isolation and packaging are then described followed by an assessment of the future for electronic materials and devices. This text is aimed at all those involved in the electronics industry. It should be of interest to electronic engineers as well as aeronautical, automobile, power and military engineers and designers, researchers and graduates.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular.It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

Sensing Technologies for Real Time Monitoring of Water Quality A comprehensive guide to the development and application of smart sensing technologies for water quality monitoring With contributions from a panel of experts on the topic, Sensing Technologies for Real Time Monitoring of Water Quality offers an authoritative resource that explores a complete set of sensing technologies designed to monitor, in real-time, water quality including agriculture. The contributing authors explore the fundamentals of sensing technologies and review the most recent advances of various materials and sensors for water quality??monitoring. This comprehensive resource includes information on a range of designs of smart electronics, communication systems, packaging, and innovative implementation approaches used for remote monitoring of water quality in various atmospheres. The book explores a variety of techniques for online water quality monitoring including internet of Things (IoT), communication systems, and advanced sensor deployment methods. This important book: Puts the spotlight on the potential capabilities and the limitations of various sensing technologies and wireless systemsOffers an evaluation of a variety of sensing materials, substrates, and designs of sensorsDescribes sensor implementation in agriculture and extreme environmentsIncludes information on the common characteristics, ideas, and approaches of water quality and quantity managementWritten for students and practitioners/researchers in water quality management, Sensing Technologies for Real Time Monitoring of Water Quality offers, in one volume, a guide to the real time sensing techniques that can improve water quality and its management.

There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo­ nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 °C, still need much more researching. This also concerns estimates of device lifetimes for con­ tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular.It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

This book is the first one devoted to high-dimensional (or large-scale) diffusion stochastic processes (DSPs) with nonlinear coefficients. These processes are closely associated with nonlinear Ito's stochastic ordinary differential equations (ISODEs) and with the space-discretized versions of nonlinear Ito's stochastic partial integro-differential equations. The latter models include Ito's stochastic partial differential equations (ISPDEs).The book presents the new analytical treatment which can serve as the basis of a combined, analytical-numerical approach to greater computational efficiency in engineering problems. A few examples discussed in the book include: the high-dimensional DSPs described with the ISODE systems for semiconductor circuits; the nonrandom model for stochastic resonance (and other noise-induced phenomena) in high-dimensional DSPs; the modification of the well-known stochastic-adaptive-interpolation method by means of bases of function spaces; ISPDEs as the tool to consistently model non-Markov phenomena; the ISPDE system for semiconductor devices; the corresponding classification of charge transport in macroscale, mesoscale and microscale semiconductor regions based on the wave-diffusion equation; the fully time-domain nonlinear-friction aware analytical model for the velocity covariance of particle of uniform fluid, simple or dispersed; the specific time-domain analytics for the long, non-exponential “tails” of the velocity in case of the hard-sphere fluid.These examples demonstrate not only the capabilities of the developed techniques but also emphasize the usefulness of the complex-system-related approaches to solve some problems which have not been solved with the traditional, statistical-physics methods yet. From this veiwpoint, the book can be regarded as a kind of complement to such books as “Introduction to the Physics of Complex Systems. The Mesoscopic Approach to Fluctuations, Nonlinearity and Self-Organization” by Serra, Andretta, Compiani and Zanarini, “Stochastic Dynamical Systems. Concepts, Numerical Methods, Data Analysis” and “Statistical Physics: An Advanced Approach with Applications” by Honerkamp which deal with physics of complex systems, some of the corresponding analysis methods and an innovative, stochastics-based vision of theoretical physics.To facilitate the reading by nonmathematicians, the introductory chapter outlines the basic notions and results of theory of Markov and diffusion stochastic processes without involving the measure-theoretical approach. This presentation is based on probability densities commonly used in engineering and applied sciences.

Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.