Masato Murakami – författare

Included in this volume are papers on biaxial and triaxial crystallographic texturing, epitaxial growth on biaxially textured substrates, melt-processing of YBCO, and basic information about HTS materials concerning phase diagrams, measurement of physical properties, characterization, and effects of various defects including grain boundaries on supercurrent transmission.

Proceedings of the symposium held at the 104th Annual Meeting of The American Ceramic Society, April 28-May1, 2002 in Missouri; Ceramic Transactions, Volume 140.

Included in this volume are papers on biaxial and triaxial crystallographic texturing, epitaxial growth on biaxially textured substrates, melt-processing of YBCO, and basic information about HTS materials concerning phase diagrams, measurement of physical properties, characterization, and effects of various defects including grain boundaries on supercurrent transmission. Proceedings of the symposium held at the 104th Annual Meeting of The American Ceramic Society, April 28-May1, 2002 in Missouri; Ceramic Transactions, Volume 140.

C axis Current I ~ . The (11 0) thick homoepitaxial film of 320 nm -------~ ~-=-=--==---==--==--==--- shows a very good surface flatness, which --------·· sJ;1 0] suggests the unique (110) atomic plane helps 2- A [1 1 OJ dimensional epitaxial growth of YBCO films, and shows excellent high Tc. The resultant 1. 0 surface morphology of YBCO is quite different Q ,. -- R(270)=1. 60 m 0 from the (110) heteroepitaxial films of similar 0 0. 0 " thickness [11). In the case of heteroepitaxy ~ . ,,_. 1. 0 irrespective of c-axis [ 12] or a-axis oriented ~ ~. . ,. R(270)=3. 71 m 0 films [5), only thin films show flat surfaces, g 0. 0 . . Tc=92. 3K "' which, however, give usually a degraded Tc due -~ 1. 0 v v I - to lattice mismatching. In conclusion, we have ::1. ,. . . . . R(270)=31. 9 mO succeeded to grow high-quality (11 0) YBCO ~ YBCO film . . Tc=90. 7 K 0. 0 ·;:: YBCO(IIO) 1 0 ·d·--~ YBCO thinfilms on (11 0) YBCO single crystal § substrate ~Xtt=u 1. 0 substra substrates with very flat surfaces and high Tc's. :£ R(270)=40. 1 m 0 0. 0 LLLLL. J. . . . LL~. t-J' L-Tc=9LWO. L-! L-K LLLLL. . . . L. . I. . . . l. . . . L. L. L. J. . . . . L. L. l. . . J 50 100 150 200 250 300 0 ACKNOWLEDGMENTS Temperature (K) One of the authors (T. U. ) would like to thank Fig.