Otfried Madelung – författare

Unter den im ersten Band dieses auf drei Bande projektierten Werks behandelten elementaren Anwendungen versteht der Autor Kollektivanregungen (Plasmonen, Phononen, Magnonen, Exzitonen) und die theorie des Elektrons als Quasiteilchen. Das Werk wendet sich an alle Naturwissenschaftler, die an einem tieferen Verstandnis der theoretischen Grundlagen der Festkorperphysik interessiert sind.

This Data Handbook is a updated and largely extended new edition of the book "Semiconductors: Basic Data". The data of the former edition have been updated and a complete representation of all relevant basic data is now given for all known groups of semiconducting materials. The CD-ROM accompanying the handbook contains the electronic version of the printed handbook, the references for all data and additionally to the 240 figures of the printed version about 1000 further figures. Full text search is possible.

The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt­ Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.

Introduction to Solid-State Theory is a textbook for graduate students of physics and materials science. It also provides the theoretical background needed by physicists doing research in pure solid-state physics and its applications to electrical engineering. The fundamentals of solid-state theory are based on a description by delocalized and localized states and - within the concept of delocalized states - by elementary excitations. The development of solid-state theory within the last ten years has shown that by a systematic introduction of these concepts, large parts of the theory can be described in a unified way. This form of description gives a "pictorial" formulation of many elementary processes in solids, which facilitates their understanding.

atisfy an urgent need of many scientists working in the field ofsemiconductor physics for having al their working place a comprehensive, high quality, but inexpensive collection of at leasl the basic data of their field of interest this volume contains the most important data ofsemiconductors. All data were compiled from infannation on semil:onductors presented on more than 6 000 pages in various volumes oflhe New Series ofLandolt-Bomstein," With these words the aim of the volume "Semiconductors - Basie Data", published by the present author - was defined in the preface to its first Edition. This edition - published in two volumes in the Series "Data in Science and Technology" - appeared in 1991/92. The 2nd !-::

The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt­ Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist''s working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.

Introduction to Solid-State Theory is a textbook for graduate students of physics and materials science. It also provides the theoretical background needed by physicists doing research in pure solid-state physics and its applications to electrical engineering. The fundamentals of solid-state theory are based on a description by delocalized and localized states and - within the concept of delocalized states - by elementary excitations. The development of solid-state theory within the last ten years has shown that by a systematic introduction of these concepts, large parts of the theory can be described in a unified way. This form of description gives a "pictorial" formulation of many elementary processes in solids, which facilitates their understanding.

atisfy an urgent need of many scientists working in the field ofsemiconductor physics for having al their working place a comprehensive, high quality, but inexpensive collection of at leasl the basic data of their field of interest this volume contains the most important data ofsemiconductors. All data were compiled from infannation on semil:onductors presented on more than 6 000 pages in various volumes oflhe New Series ofLandolt-Bomstein," With these words the aim of the volume "Semiconductors - Basie Data", published by the present author - was defined in the preface to its first Edition. This edition - published in two volumes in the Series "Data in Science and Technology" - appeared in 1991/92. The 2nd !-::

The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded by the fact that merely larger libraries - often far away from the scientist''s working place - can afford such precious collections. To satisfy an urgent need of many scientists working in the field of semiconductor physics for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data of their field of interest this volume contains the most important data of semiconductors. All data were compiled from information on semiconductors presented on more than 6000 pages in various volumes of the New Series of Landolt-Bomstein. We hope to meet the needs of the community of semiconductor physicists with this volume, forming a bridge between the laboratory and additional information sources in the libraries. The Editor Marburg, January 1996 Table of contents A Introduction 1 General remarks . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 The corresponding Landolt-Bomstein volumes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 Physical quantities tabulated in this volume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 B Physical data Elements of the IVth group and IV-IV compounds 1. 1 Diamond (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1. 2 Silicon (Si) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1. 3 Germanium (Ge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 1. 4 Grey tin (a-Sn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 1. 5 Silicon carbide (SiC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1. 6 Silicon germanium alloys (SixGel_x) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2 III-V compounds 2. 1 Boron nitride (BN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2. 2 Boron phosphide (BP) . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 2. 3 Boron arsenide (BAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 2. 4 Aluminium nitride (AIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2. 5 Aluminium phosphide (AlP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 2. 6 Aluminium arsenide (AlAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .