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This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices.The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made.The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years.However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data.Chapter 1 is an introduction to the market study.Chapter 2 contains an executive summary.Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application.Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described.The application data are presented for the following industrial groups:• Automotive• Computers• Consumer• Industrial• Military and Aerospace• Telecommunications• OthersA full 5-year forecast and analysis is provided by application and region.Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices.This process is crystal growth and involves the following sequence:• Bulk growth of single crystals• Epitaxial growth of semiconductor single crystal layers• Ion implantation• Device fabrication, ie gate and contact formation, etc• Packaging & testChapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices.Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research.Chapter 8 is a directory of suppliers.Chapter 9 provides acronyms and exchange rates.

The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology.The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players.It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon.Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research.The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology.

For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology.

The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.

For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices.The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made.

The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years.

However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data.

Chapter 1 is an introduction to the market study.Chapter 2 contains an executive summary.Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application.Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described.

The application data are presented for the following industrial groups:. Automotive. Computers. Consumer. Industrial. Military�and Aerospace. Telecommunications. OthersA full 5-year forecast and analysis is provided by application and region.Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices.

This process is crystal growth and involves the following sequence:. Bulk growth of single crystals. Epitaxial growth of semiconductor single crystal layers. Ion implantation. Device fabrication, ie gate and contact formation, etc. Packaging & testChapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices.Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research.Chapter 8 is a directory of suppliers.Chapter 9 provides acronyms and exchange rates.