Richard H. Bube – författare

This Third Edition of ELECTRONS IN SOLIDS: AN INTRODUCTORY SURVEY, is the result of a thorough re-examination of the entire text, incorporating suggestions and corrections by students and professors who have used the text. Explanations and descriptions have been expanded, and additional information has been added on high Tc superconductors, diamond films, "buckminsterfullerenes," and thin magnetic materials. Adopted by many colleges and universities, this text has proven to be a solid introduction to the electrical, optical and magnetic properties of materials.- Contains comprehensive coverage of electronic properties in metals, semiconductors, and insulators at a fundamental level- Stresses the use of wave properties as an integrating theme for the discussion of phonons, photons, and electrons- Includes a complete set of illustrative problems along with exercises and answers- Features a careful indication of both Gaussian and SI unit systems

This Third Edition of ELECTRONS IN SOLIDS: AN INTRODUCTORY SURVEY, is the result of a thorough re-examination of the entire text, incorporating suggestions and corrections by students and professors who have used the text. Explanations and descriptions have been expanded, and additional information has been added on high Tc superconductors, diamond films, "buckminsterfullerenes," and thin magnetic materials. Adopted by many colleges and universities, this text has proven to be a solid introduction to the electrical, optical and magnetic properties of materials. Contains comprehensive coverage of electronic properties in metals, semiconductors, and insulators at a fundamental level Stresses the use of wave properties as an integrating theme for the discussion of phonons, photons, and electrons Includes a complete set of illustrative problems along with exercises and answers Features a careful indication of both Gaussian and SI unit systems

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having found wide acceptance and use. Readers will therefore find this volume to be an up-to-date and concise summary of the major concepts, models and results. It is intended as a text for graduate students, but will be an important resource for anyone researching in this interesting field.

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

A thinking person can hardly avoid developing some kind of pattern within which to express a personal reaction to both scientific and theological inputs. Bube works to clarify the identity of these possible patterns for relating science and the Christian faith, to give examples, and to provide a balanced critique of each. Such an understanding of the issues involved is essential for mature Christians living in a world dominated by the concepts and artifacts of science.Contents: A Look at the Issues; Authentic Science; Authentic Christian Theology; Pattern 1: Science Has Destroyed Christian Theology; Pattern 2: Christian Theology in Spite of Science; Pattern 3: Science and Christian Theology are Unrelated; Pattern 4: Science Demands Christian Theology; Pattern 5: Science Redefines Christian Theology; Pattern 6: A New Synthesis of Science and Christian Theology; Pattern 7: Christian Theology and Science: Complementary Insights; Epilogue: A Christian Philosophy of Science.