Övrigt, Engelska, 2014
Fundamentals of Silicon Carbide Technology – Growth, Characterization, Devices, and Applications
Av Tsunenobu Kimoto, James A. Cooper
1816 kr
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Produktinformation
- Märke: John Wiley & Sons Inc
- Utgivningsdatum: 2014-09-26
- Höjd: 150 x 250 x 15 mm
- Vikt: 666 g
- Språk: Engelska
- Förlag: John Wiley & Sons Inc
- EAN: 9781118313534
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Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan. Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices. James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T s first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.
Recensioner i media
Students or working professionals interested in SiC technology will find this book worth reading. (IEEE Electrical Insulation Magazine, 1 November 2015) If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems designers. It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices. (How2Power.com, 1 March 2015)
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