Electromigration in Thin Films and Electronic Devices

Choong-Un Kim is Professor of Materials Science and Engineering at the University of Texas at Arlington, USA.

• Contributor contact detailsPart I: IntroductionChapter 1: Modeling of electromigration phenomenaAbstract:1.1 Introduction1.2 Analytical methods1.3 Numerical methods1.4 ConclusionChapter 2: Modeling electromigration using the peridynamics approachAbstract:2.1 Introduction2.2 Previous approaches to modeling electromigration (EM)2.3 Peridynamics (PD)2.4 PD and EM2.5 Illustrative example2.6 Computational requirements: present and future2.7 ConclusionsChapter 3: Modeling, simulation, and X-ray microbeam studies of electromigrationAbstract:3.1 Introduction3.2 Modeling and simulation approaches3.3 Experimental, modeling and simulation findings3.4 Conclusions3.5 AcknowledgmentsPart II: Electromigration in copper interconnectsChapter 4: X-ray microbeam analysis of electromigration in copper interconnectsAbstract:4.1 Introduction4.2 Samples and X-ray microdiffraction methods4.3 Electromigration (EM)-induced strains in conductor lines4.4 Conclusions and summary4.6 AppendixChapter 5: Voiding in copper interconnects during electromigrationAbstract:5.1 Introduction5.2 Void nucleation5.3 Void growth5.4 Immortality5.5 Future trends5.6 AcknowledgementsChapter 6: The evolution of microstructure in copper interconnects during electromigrationAbstract:6.1 Introduction6.2 Copper microstructure evolution during electromigration6.3 Plasticity and materials degradation mechanisms in copper interconnects6.4 Implications for the reliability of advanced copper interconnect schemes6.5 Conclusions and future trendsChapter 7: Scaling effects on electromigration reliability of copper interconnectsAbstract:7.1 Introduction7.2 Mass transport during electromigration (EM)7.3 Effect of via scaling on EM reliability7.4 Multi-linked statistical tests for via reliability7.5 Methods to improve the EM lifetime7.6 Conclusion and future trends7.7 AcknowledgementsChapter 8: Electromigration failure in nanoscale copper interconnectsAbstract:8.1 Process solutions being developed for copper interconnects8.2 Electromigration (EM) scaling by generation8.3 Suppression by metal capping: blocking rate-limiting EM pathways8.4 Copper microstructure impact8.5 Conclusions8.6 AcknowledgementsPart III: Electromigration in solderChapter 9: Electromigration-induced microstructural evolution in lead-free and lead–tin soldersAbstract:9.1 Introduction9.2 Intermetallic compound formation9.3 Void formation9.4 Formation of whisker and hillock9.5 Grain reorientation and grain rotation9.6 Dissolution and recrystallizationChapter 10: Electromigration in flip-chip solder jointsAbstract:10.1 Introduction10.2 Electromigration (EM)-induced voiding failure of solder interconnects10.3 Joule heating-enhanced dissolution of under bump metallurgy (UBM) and the diffusion of on-chip metal interconnects10.4 Stress-related degradation of solder interconnects under EM10.5 Thermomigration (TM) behavior in solder interconnects under a thermal gradient10.6 Conclusions10.7 AcknowledgementsIndex