Advances in Chemical Mechanical Planarization (CMP)

Inbunden, Engelska, 2016

Del i serien Woodhead Publishing Series in Electronic and Optical Materials

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Beskrivning

Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects.

This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes.

Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.

Considers techniques and processes for CMP of dielectric and metal films
Includes chapters devoted to CMP for particular materials
Addresses consumables and process control for improved CMP

Produktinformation

Utgivningsdatum:2016-01-19
Mått:152 x 229 x 0 mm
Vikt:690 g
Format:Inbunden
Språk:Engelska
Serie:Woodhead Publishing Series in Electronic and Optical Materials
Antal sidor:536
Förlag:Elsevier Science
ISBN:9780081001653

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Mer om författaren

Babu Suryadevara is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, United States. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.

Innehållsförteckning

IntroductionPart I CMP of dielectric and metal films1 Chemical and physical mechanisms of dielectric CMP 2 Cu CMP Challenges in 22 nm BEOL and beyond3 Electrochemical techniques and their applications for CMP of metal films4 Ultra low-k materials and CMP5 CMP processing of high-mobility channel materials; alternatives to Si 6 Multiscale modeling of CMP 7 Chemical mechanical polishing (CMP) of silicon carbide (SiC) 8 Chemical and physical mechanisms of CMP of gallium nitride9 Abrasive-free and ultralow abrasive CMP processes 10 Environmental aspects of planarization processesPart II Consumables and Process Control for Improved CMP11 Preparation and characterization of slurry for CMP12 Chemical Metrology Methods for CMP Quality13 Diamond Disc Pad Conditioning in Chemical Mechanical Polishing14 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy 15 A novel slurry injection system for CMP16 CMP removal rate uniformity and role of carrier parameters 17 Approaches to defect characterization, mitigation and reduction18 Applications of CMP to More than Moore Devices 19 CMP for phase change materials