Babu Suryadevara is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, United States. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.

• Part One - CMP of dielectric and metal films1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond3. Electrochemical techniques and their applications for CMP of metal films4. Ultra-low-k materials and chemical mechanical planarization (CMP)5. CMP processing of high mobility channel materials - alternatives to Sis6. Multiscale modeling of chemical mechanical planarization (CMP)7. Polishing of SiC films8. Chemical and physical mechanisms of CMP of gallium nitride9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes10. Transient copper removal rate phenomena with implications for polishing mechanisms11. Environmental aspects of planarization processes Part Two - Consumables and process control for improved CMP12. Preparation and characterization of slurry for CMP13. Chemical metrology methods for CMP quality14. Diamond disc pad conditioning in chemical mechanical polishing15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters17. Approaches to defect characterization, mitigation and reduction18. Challenges and solutions for post-CMP cleaning at device and interconnect levels19. Applications of chemical mechanical planarization (CMP) to More than Moore devices20. CMP for phase change materials21. CMP pads and their performance22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning

Babu Suryadevara is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, United States. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.

• Part One - CMP of dielectric and metal films1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond3. Electrochemical techniques and their applications for CMP of metal films4. Ultra-low-k materials and chemical mechanical planarization (CMP)5. CMP processing of high mobility channel materials - alternatives to Sis6. Multiscale modeling of chemical mechanical planarization (CMP)7. Polishing of SiC films8. Chemical and physical mechanisms of CMP of gallium nitride9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes10. Transient copper removal rate phenomena with implications for polishing mechanisms11. Environmental aspects of planarization processes Part Two - Consumables and process control for improved CMP12. Preparation and characterization of slurry for CMP13. Chemical metrology methods for CMP quality14. Diamond disc pad conditioning in chemical mechanical polishing15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters17. Approaches to defect characterization, mitigation and reduction18. Challenges and solutions for post-CMP cleaning at device and interconnect levels19. Applications of chemical mechanical planarization (CMP) to More than Moore devices20. CMP for phase change materials21. CMP pads and their performance22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning