Defects in Advanced Electronic Materials and Novel Low Dimensional Structures

Häftad, Engelska, 2018

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Beskrivning

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory.

While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.

Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers
Addresses a range of defects in a variety of systems, providing a comparative approach
Includes sections on advances in theory that provide insights on where this body of research might lead

Produktinformation

Utgivningsdatum:2018-06-21
Mått:152 x 229 x undefined mm
Vikt:500 g
Format:Häftad
Språk:Engelska
Serie:Woodhead Publishing Series in Electronic and Optical Materials
Antal sidor:306
Förlag:Elsevier Science
ISBN:9780081020531

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Mer om författaren

Dr. Stehr is the Lab Manager at the Swedish Interdisciplinary Magnetic Resonance Center. In 2015 he received the Corbett Prize for outstanding young researchers and the International Association of Advanced Materials young scientist award. He has given a number of invited talks at international conferences and has been awarded multiple grants for his research. Dr. Buyanova is currently the Co-Chair of the Scientific Division of Functional Electronic Materials Linköping University. Her current research interests include the physics and applications of new functional materials and nanostructures with a particular emphasis on: dilute nitrides, electronic structure of innovative quantum structures, and functional materials based on ZnO semiconductors and related nanostructures. She has acted as a program committee member and organizer for international conferences, including most recently the 33rd International Conference of Physics, Semiconductors in Beijing China. She has edited two books, authored more than 480 peer-reviewed publications and has given 60 invited talks at international conferences. Weimin Chen currently acts as the Director of the Swedish Interdisciplinary Magnetic Resonance Center and the Head of the Scientific Division of Functional Electronic Materials at Linköping University. The focus of the group includes novel spintronic materials, advanced electronic and photonic materials based on wide bandgap semiconductors, and semiconductor nanostructures. Professor Chen has also had leadership roles in more than 30 national and international research projects as well as serving from 1999-2007 as the Vice President of the Nordic Electron Paramagnetic Society. He has edited two books, authored more than 600 peer-reviewed articles and has acted as a reviewer for 11 European and American funding organizations.

Innehållsförteckning

1. Point defects in ZnOMatthew D. McCluskey2. Point defects in group III nitridesBo Anders Monemar and Plamen P. Paskov3. Defects in 1D-NanowiresJan Stehr4. Defects in carbon nanotubesAli Ghavamian, Maksym Rybachuk and Andreas Öchsner5. Defects in grapheneLitao Sun and Tao Xu6. Defects in 2D-materialsWu Zhou and Junhao Lin7. Energy upconversion promoted by defectsIrina Buyanova8. Defects for quantum information processing in SiCGeorgy Astakhov and Vladimir Dyakonov9. Defects for quantum information processing in SiEisuke Abe and Kohei Itoh10. Room temperature defect engineered spintronics in dilute nitridesWeimin M. Chen