High Mobility Materials for CMOS Applications

Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials. From 2012 until April 2016 she was program manager of the imec LOGIC program, focusing on high mobility channels, TFET and nanowires. Since April 2016 she is a distinguished member of technical staff responsible for the research on novel CMOS scaling approaches based on heterogeneous integration of new materials with Si and new material-enabled device and system approaches to increase functionality.She has authored or coauthored more than 300 papers in international journals and conference proceedings. She has been a member of the CDT committee of the IEDM conference and she is still a member of the Program Committees of the international conferences ESSDERC and ULIS/EUROSOI. Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.

• 1. CMOS and Beyond CMOS: Scaling Challenges2. Opportunities for high mobility materials integrated on a Si platform3. Monolithic integration of InGaAs on Si(001) substrate for Logic devices4. III-N epitaxy on Si for power electronics5. Impact of defects on the performance of high-mobility semiconductor devices6. (Si)Ge devices7. III-V Devices and Technology for CMOS8. Beyond CMOS9. Optoelectronic devices integrated on silicon10. High mobility devices for digital applications