Power Electronics Device Applications of Diamond Semiconductors

Satoshi Koizumi received doctor of engineering (electrical engineering and electronics) at Aoyama Gakuin University (Tokyo, Japan) and joined the diamond research group at National Institute for Materials Science (NIMS), Tsukuba in 1994. Presently, he works as a principal researcher at NIMS on the topics of semiconducting diamond growth and device applications. He established the n-type diamond (which does not exist in nature) growth technique and has succeeded in deep ultraviolet LED formation by diamond pn junctions for the first time. He has worked on CVD diamond research for more than 25 years and published more than 150 refereed journal papers with about 3000 citations. In 2014, he started a research project of diamond power electronics in the Strategic Innovation Program (SIP) Japan cabinet office. Hitoshi Umezawa studied electrical engineering and materials science at Waseda University, Japan, where he graduated in 2002 with a doctoral degree in engineering. After that, he became a Post-Doc at Waseda University financed by Japan Society of the Promotion of Science (JSPS). In 2005 he became a researcher at Diamond Research Center in National Institute of Advanced Industrial Science and Technology (AIST), Japan. He teaches semiconductor devices and power electronics as a visiting professor at Chiba University, Japan. He is lanef Chair, whom the research activities are funded by University Grenoble Alpes, France. His research interests include diamond growth and characterization, high power and high frequency devices and related device fabrication processes. He has more than 120 publications in refereed journals. Julien Pernot is Professor at University Grenoble Alpes and Institut NEEL/CNRS, (France). He is Chair of the Department of Electronics Electrical Engineering Control and Systems at University Grenoble Alpes. Julien received his PhD degree at the University of Montpellier (France) in 2001 where he worked on the electrical transport properties of silicon carbide up to 2002. In 2003, he got an associate professor position at University Grenoble Alpes and at Institut NEEL/CNRS. His current research interests focus on the electrical transport properties of diamond, SiC, ZnO, GaN and related materials. His main scientific contribution is related to innovative devices and electrical measurements performed on thin films, micro- or nanowires wide bandgap semiconductors. He integrated the “Institut Universitaire de France” in 2012 and is promoted as Professor in 2016. He is co-authors of more than 100 papers. Julien is Editorial Board Member of Scientific Reports. He is involved in the organisation of several international diamond conferences and workshops, including the International Conference on Diamond and Carbon Materials (co-Chair, 2017~), New Diamond and Nano Carbons (Programme Committee, 2016-2017), Hasselt Diamond Workshop (Programme Committee, 2014~), and Chair of the Diamond Power Electronics Symposium in 2016 MRS Spring Meeting, and co-Chair of the French-Japanese workshops on diamond for power electronics (2013~). Mariko Suzuki received PhD degree at Waseda University (Japan) on semiconductor physics especially for wide bandgap materials including diamond. She has been working at Toshiba R&D center as a senior research scientist to research and develop novel electronics devices and power electronics application of diamond. She has many publications on diamond and experimentally confirmed high breakdown features of diamond in recent research. She currently works at Seki Diamond Systems Division of Cornes Technologies Ltd. as a chief scientist. Her present research target is to develop diamond growth and the systems for many applications of diamond including power electronics.

• 1. Diamond crystal growth from the vapour phase for epitaxial diamond and wafer preparation2. Doping and semiconductor characterizations3. Fundamental material’s nature of diamond4. Device formation and the characterizations5. Circuits and applications