Ferroelectricity in Doped Hafnium Oxide

Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since. Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors.Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.

• 1. Fundamentals of Ferroelectric and piezoelectric properties2. HfO2 processes3. Dopant screening for optimization of the ferroelectric properties4. Electrode screening for capacitor applications5. Phase transition6. Switching kinetics7. Impact of oxygen vacancies8. Epitaxial growth of ferroelectric HfO29. Thickness scaling Chapter10. Simulation/Modelling11. Structural characterization on a nanometer scale: PFM, TEM12. Comparison to standard ferroelectric materials13. FE HfO2 based devices