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Qixin Guo, Xinqiang Wang - Ultrawide Bandgap Semiconductors, Häftad

Häftad, Engelska, 2027

Ultrawide Bandgap Semiconductors

Growth, Characterization, and Applications

Av Qixin Guo, Xinqiang Wang

Del i serien Vacuum and Thin-Film Deposition Technologies

2020 kr

Kommande

Beskrivning
Ultrawide Bandgap Semiconductors: Growth, Characterization, and Applications provides a thorough overview of ultrawide bandgap materials such as AlN, AlGaN, BN, Diamond, and Ga?O?, focusing on their growth methods, fundamental properties, and device applications. The increasing demand for high-performance power electronics, deep-UV optoelectronics, and quantum devices underscores the need for a comprehensive understanding of these materials. The book covers core topics including epitaxial growth techniques, advanced characterization methods, and emerging applications, with dedicated chapters on each material system. Special attention is given to innovative device architectures and the potential of GeO? and other novel materials for future technological breakthroughs. Its detailed chapters on growth techniques, property modulation, and device integration support both educational and applied research efforts, fostering innovation in next-generation electronic and photonic systems.

  • Summarizes the latest growth and characterization techniques for ultrawide bandgap semiconductors
  • Explores applications in power electronics, UV optoelectronics, and quantum devices
  • Connects fundamental material properties with device engineering and performance
  • Incorporates emerging materials such as GeO? for future innovations
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Qixin Guo is a Professor in the Department of Electrical and Electronic Engineering and the Synchrotron Light Application Center at Saga University, Japan. His research focuses on the epitaxial growth and characterization of semiconductor materials, in particular on the growth of nitride and oxide semiconductors using techniques such as metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), andsputtering. His expertise extends to various characterization techniques, including X-ray diffraction (XRD), UV/Vis spectrophotometry, Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), and X-ray absorption fine structure (XAFS). Xinqiang Wang is a Professor and Deputy Director of the State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, and Director of the Dongguan Research Institute for Optoelectronics at Peking University, China. His research focuses on the growth of III-nitride compound semiconductors using molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), as well as the fabrication and characterization of light-emitting and electronic devices. His expertise extends to various characterization techniques, including micro photoluminescence (μ-PL), X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (STEM).

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