Karen Maex, IMEC Fellow, Silicon Process and Device Technology Division, Leuven, Belgium & Professor at Katholieke Universiteit Leuven Mikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, BelgiumIMEC is the largest independent microelectronics R&D centre in Europe, with over 1250 staff. R&D ranges from the design of complex single-chip and single-package systems for telecommunications and multimedia, new process technologies for optoelectronics, photovoltaics, area-array packing, etc.

"The book is well organized and has excellent technical depth with recent state-of-the-art information. Researchers, graduate students, and those in industry working on finding new materials and processes for thin-film dielectric materials would find this book to be a valuable resource." (IEEE Electrical Insulation Magazine, March/April 2009)

• Series Preface. Preface. (Mikhail Baklanov, Martin Green and Karen Maex).1. Low and Ultralow Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition. (A. Grill).2. Spin-On Dielectric Materials. (Geraud Dubois, Willi Volksen and Robert D. Miller).3.Porosity of Low Dielectric Constant Materials.3.1 Positron Annihilation Spectroscopy. (David W. Gidley, Hua-Gen Peng, and Richard Vallery).3.2Structure Characterization of Nanoporous Interlevel Dielectric Thin Films with X-ray and Neutron Radiation. (Christopher L. Soles, Hae-Jeong Lee, Bryan D. Vogt, Eric K. Lin, Wen-li Wu).3.3 Ellipsometric Porosimetry. (M. R. Baklanov).4.Mechanical and Transport Properties of Low-k Dielectrics. (J.L. Plawsky, R. Achanta, W. Cho, O. Rodriguez, R. Saxena, and W.N. Gill).5. Integration of low-k dielectric films in damascene processes. (R.J.O.M. Hoofman, V.H. Nguyen,V. Arnal, M. Broekaart, L.G. Gosset,W.F.A. Besling, M. Fayolle and F. Iacopi).6. ONO structures and oxynitrides in modern microelectronics. Material science, characterization and application. (Yakov  Roizin  and Vladimir  Gritsenko).High Dielectric constant Materials.7. Material Engineering of High-k Gate Dielectrics. (Akira Toriumi and Koji Kita).8. Physical Characterisation of ultra-thin high-k dielectric. (T. Conard, H. Bender and W. Vandervorst).9. Electrical Characterization of Advanced Gate Dielectrics. (Robin Degraeve, Jurriaan Schmitz, Luigi Pantisano, Eddy Simoen, Michel Houssa, Ben Kaezer, and Guido Groeseneken).Medium dielectric constant materials.10. Integration Issues of High-k Gate Dielectrics. (Yasuo Nara).Dielectric films for interconnects (packaging).11. Anisotropic Conductive Film (ACF) for Advanced Microelectronic Interconnects. (Yi Li, C. P. Wong).Index.

Karen Maex, IMEC Fellow, Silicon Process and Device Technology Division, Leuven, Belgium & Professor at Katholieke Universiteit Leuven Mikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, BelgiumIMEC is the largest independent microelectronics R&D centre in Europe, with over 1250 staff. R&D ranges from the design of complex single-chip and single-package systems for telecommunications and multimedia, new process technologies for optoelectronics, photovoltaics, area-array packing, etc.

"The book is well organized and has excellent technical depth with recent state-of-the-art information. Researchers, graduate students, and those in industry working on finding new materials and processes for thin-film dielectric materials would find this book to be a valuable resource." (IEEE Electrical Insulation Magazine, March/April 2009)

• Series Preface. Preface. (Mikhail Baklanov, Martin Green and Karen Maex).1. Low and Ultralow Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition. (A. Grill).2. Spin-On Dielectric Materials. (Geraud Dubois, Willi Volksen and Robert D. Miller).3.Porosity of Low Dielectric Constant Materials.3.1 Positron Annihilation Spectroscopy. (David W. Gidley, Hua-Gen Peng, and Richard Vallery).3.2Structure Characterization of Nanoporous Interlevel Dielectric Thin Films with X-ray and Neutron Radiation. (Christopher L. Soles, Hae-Jeong Lee, Bryan D. Vogt, Eric K. Lin, Wen-li Wu).3.3 Ellipsometric Porosimetry. (M. R. Baklanov).4.Mechanical and Transport Properties of Low-k Dielectrics. (J.L. Plawsky, R. Achanta, W. Cho, O. Rodriguez, R. Saxena, and W.N. Gill).5. Integration of low-k dielectric films in damascene processes. (R.J.O.M. Hoofman, V.H. Nguyen,V. Arnal, M. Broekaart, L.G. Gosset,W.F.A. Besling, M. Fayolle and F. Iacopi).6. ONO structures and oxynitrides in modern microelectronics. Material science, characterization and application. (Yakov  Roizin  and Vladimir  Gritsenko).High Dielectric constant Materials.7. Material Engineering of High-k Gate Dielectrics. (Akira Toriumi and Koji Kita).8. Physical Characterisation of ultra-thin high-k dielectric. (T. Conard, H. Bender and W. Vandervorst).9. Electrical Characterization of Advanced Gate Dielectrics. (Robin Degraeve, Jurriaan Schmitz, Luigi Pantisano, Eddy Simoen, Michel Houssa, Ben Kaezer, and Guido Groeseneken).Medium dielectric constant materials.10. Integration Issues of High-k Gate Dielectrics. (Yasuo Nara).Dielectric films for interconnects (packaging).11. Anisotropic Conductive Film (ACF) for Advanced Microelectronic Interconnects. (Yi Li, C. P. Wong).Index.