A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)

• Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.

A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)

• Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.

A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)

• Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.