Vijay Kumar Sharma, PhD is an assistant professor in the School of Electronics and Communication Engineering at Shri Mata Vaishno Devi University. He is published widely in journals and conferences of repute and has authored many book chapters and patents. His research interests are in the area of low-power circuit design.

• Preface xvii1 Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity 1Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh1.1 Introduction 21.2 FinFET Technology 41.3 Device Variability 61.4 Junctionless Transistors 101.5 Global TCAD Solutions 181.6 Simulation Methodology 211.7 Findings and Conversations 221.8 Conclusion 372 Nanotechnology and Applications 45Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary2.1 Introduction 462.2 What Makes Nanotechnology Work 48\2.3 Preparation Method 502.4 Classification of Nanoparticles (NPs) 512.5 Applications of Nanotechnology 522.6 Future Prospect 592.7 Conclusion 603 Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage 69Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram3.1 Introduction 703.2 Previous Literature 743.3 Leakage Reduction Techniques 763.4 Architecture and Functioning of Different SRAM Cell 773.5 SRAM Cell: Various Performance Parameters 823.6 The Proposed 8-T SRAM Cell 863.7 Results and Discussion 883.8 Conclusion 964 Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics 103Navneet Kumar and Himanshu Yadav4.1 Introduction 1044.2 Principle of Fingerprint Detection 1054.3 Techniques for LFPs Analysis 1064.4 Nanotechnology in Forensic Science 1104.5 Discussion 1194.6 Conclusion 1205 Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor 129Kajal and Vijay Kumar Sharma5.1 Introduction 1305.2 Evolution of Transistor Technology 1335.3 Advances in Transistor Design 1405.4 Challenges in Silicon Semiconductor Technology 1435.5 Beyond Silicon: New Materials and Technologies 1485.6 Quantum and Molecular Electronics 1515.7 Advanced Device Concept 1525.8 Conclusion 1556 EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications 165Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima6.1 Introduction 1666.2 Types of Voltage Level Shifters 1696.3 Performance Analysis of Start of Art Level Shifters 1836.4 Conclusion 1857 Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field 191Rubby Mahajan and Ram Prakash7.1 Introduction 1917.2 2D and 3D Materials 1927.3 Multigates 1947.4 Carbon Nanotubes 1987.5 Graphene Nanoribbon (GNRs) 2077.6 Tunnel Transistor 2117.7 Junctionless Transistor 2137.8 Concept of Single Electron Idea 2177.9 Fundamental Principles of Spintronics 2197.10 Future Prospects 2218 Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications 229Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala8.1 Introduction 2308.2 GDI- and CMOS-Based Logic Circuits 2328.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits 2378.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications 2498.5 Conclusion 2619 TFET Fundamentals: A Gateway to Nanoscale Electronics 267Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal9.1 Introduction 2689.2 Fundamentals of TFET 2709.3 Techniques for Enhancing Performance 2769.4 Application in Biosensor 2809.5 Significance of TFET in Advancing Nanoscale Electronics 2869.6 Challenges and Future Outlook 2879.7 Conclusion 28810 Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures 297Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram10.1 Introduction 29810.2 In-Memory Computing: Enhancing Data Processing Efficiency 30210.3 Comparing Traditional Computing Architecture with In-Memory Computing 30310.4 Applications of IMC 30510.5 Types of Memory Used in IMC 30710.6 Operations of 6T-SRAM 31110.7 Architecture of SRAM-Based IMC 31310.8 Comparative Analysis of IMC Architecture Using Different Memory Types 31410.9 Design Challenges with SRAM Based IMC 32510.10 Conclusion 32911 The Tunnel FET: Fundamentals, Calibration, and Simulation 333Nisha Yadav, Sunil Jadav and Gaurav Saini11.1 Need of Tunnel FETs 33411.2 Origin of Tunnel FETs 33611.3 TFET Structure and Working Principle 33611.4 Performance Parameters 34011.5 The Development of TFET Technology 34211.6 Calibration 34911.7 Simulation of DG-TFET 35011.8 Challenges for TFET 35311.9 Conclusion 35412 The Junctionless Device 363Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey12.1 Introduction 36312.2 Qualitative Behavior of JLFETs 36612.3 Electrical Characteristics of JLFET 37412.4 Design Constraints for Junctionless Devices 37512.5 Classification of JLFETs 37812.6 Status of Model Formulation for JLFETs 38412.7 Applications of JLFETs 38512.8 Simulation of JLFETs 38612.9 Conclusion 39013 Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping 395Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal13.1 Introduction 39613.2 Significance of Boron Nitride Nanoribbons 39913.3 Techniques for Synthesis of h-BN 40013.4 Synthesis of BNNR 40413.5 Edge Passivation of BNNR 40513.6 Doping of BNNR 40613.7 Computational Details 40713.8 Results and Discussion 40913.10 Summary 41814 Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting‑Edge Electron Spin Research 429R. Bhattacharya14.1 Introduction 43014.2 Understanding Spintronics: Types 43014.3 Spintronic Materials and Devices 43114.4 Manipulating Spin–Orbit Coupling 44514.5 Spin Transport and Injection 44714.6 Spintronic Memory Devices 45514.7 Challenges and Future Directions 46014.8 Mathematical Consideration of Spintronics 46514.9 Conclusions 46915 Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints 475Pankaj Bhambri and Alex Khang15.1 Introduction 47615.2 Overview of Ultra-Nanoscale Design 47715.3 Performance Optimization in Ultra-Nanoscale Applications 48115.4 Nanomaterials in Ultra-Nanoscale Technologies 48515.5 Design Techniques with Logical Schematics and Characteristics 48915.6 Complex Limitations in the Ultra-Nanoscale Realm 49015.7 Manufacturing Challenges and Solutions 49415.8 Ethical Considerations in Ultra-Nanoscale Technologies 49715.9 Real-World Case Studies and Examples 49815.10 Conclusion 50116 Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications 509Ekta Jolly and Vijay Kumar Sharma16.1 Introduction 51016.2 CNT Fundamentals 51016.3 CNTFET Modeling Approaches 51516.4 CNTFET-Based Circuits 51916.5 Conclusion 535References 535Index 541

Vijay Kumar Sharma, PhD is an assistant professor in the School of Electronics and Communication Engineering at Shri Mata Vaishno Devi University. He is published widely in journals and conferences of repute and has authored many book chapters and patents. His research interests are in the area of low-power circuit design.

• Preface xvii1 Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity 1Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh1.1 Introduction 21.2 FinFET Technology 41.3 Device Variability 61.4 Junctionless Transistors 101.5 Global TCAD Solutions 181.6 Simulation Methodology 211.7 Findings and Conversations 221.8 Conclusion 372 Nanotechnology and Applications 45Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary2.1 Introduction 462.2 What Makes Nanotechnology Work 48\2.3 Preparation Method 502.4 Classification of Nanoparticles (NPs) 512.5 Applications of Nanotechnology 522.6 Future Prospect 592.7 Conclusion 603 Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage 69Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram3.1 Introduction 703.2 Previous Literature 743.3 Leakage Reduction Techniques 763.4 Architecture and Functioning of Different SRAM Cell 773.5 SRAM Cell: Various Performance Parameters 823.6 The Proposed 8-T SRAM Cell 863.7 Results and Discussion 883.8 Conclusion 964 Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics 103Navneet Kumar and Himanshu Yadav4.1 Introduction 1044.2 Principle of Fingerprint Detection 1054.3 Techniques for LFPs Analysis 1064.4 Nanotechnology in Forensic Science 1104.5 Discussion 1194.6 Conclusion 1205 Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor 129Kajal and Vijay Kumar Sharma5.1 Introduction 1305.2 Evolution of Transistor Technology 1335.3 Advances in Transistor Design 1405.4 Challenges in Silicon Semiconductor Technology 1435.5 Beyond Silicon: New Materials and Technologies 1485.6 Quantum and Molecular Electronics 1515.7 Advanced Device Concept 1525.8 Conclusion 1556 EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications 165Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima6.1 Introduction 1666.2 Types of Voltage Level Shifters 1696.3 Performance Analysis of Start of Art Level Shifters 1836.4 Conclusion 1857 Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field 191Rubby Mahajan and Ram Prakash7.1 Introduction 1917.2 2D and 3D Materials 1927.3 Multigates 1947.4 Carbon Nanotubes 1987.5 Graphene Nanoribbon (GNRs) 2077.6 Tunnel Transistor 2117.7 Junctionless Transistor 2137.8 Concept of Single Electron Idea 2177.9 Fundamental Principles of Spintronics 2197.10 Future Prospects 2218 Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications 229Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala8.1 Introduction 2308.2 GDI- and CMOS-Based Logic Circuits 2328.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits 2378.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications 2498.5 Conclusion 2619 TFET Fundamentals: A Gateway to Nanoscale Electronics 267Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal9.1 Introduction 2689.2 Fundamentals of TFET 2709.3 Techniques for Enhancing Performance 2769.4 Application in Biosensor 2809.5 Significance of TFET in Advancing Nanoscale Electronics 2869.6 Challenges and Future Outlook 2879.7 Conclusion 28810 Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures 297Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram10.1 Introduction 29810.2 In-Memory Computing: Enhancing Data Processing Efficiency 30210.3 Comparing Traditional Computing Architecture with In-Memory Computing 30310.4 Applications of IMC 30510.5 Types of Memory Used in IMC 30710.6 Operations of 6T-SRAM 31110.7 Architecture of SRAM-Based IMC 31310.8 Comparative Analysis of IMC Architecture Using Different Memory Types 31410.9 Design Challenges with SRAM Based IMC 32510.10 Conclusion 32911 The Tunnel FET: Fundamentals, Calibration, and Simulation 333Nisha Yadav, Sunil Jadav and Gaurav Saini11.1 Need of Tunnel FETs 33411.2 Origin of Tunnel FETs 33611.3 TFET Structure and Working Principle 33611.4 Performance Parameters 34011.5 The Development of TFET Technology 34211.6 Calibration 34911.7 Simulation of DG-TFET 35011.8 Challenges for TFET 35311.9 Conclusion 35412 The Junctionless Device 363Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey12.1 Introduction 36312.2 Qualitative Behavior of JLFETs 36612.3 Electrical Characteristics of JLFET 37412.4 Design Constraints for Junctionless Devices 37512.5 Classification of JLFETs 37812.6 Status of Model Formulation for JLFETs 38412.7 Applications of JLFETs 38512.8 Simulation of JLFETs 38612.9 Conclusion 39013 Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping 395Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal13.1 Introduction 39613.2 Significance of Boron Nitride Nanoribbons 39913.3 Techniques for Synthesis of h-BN 40013.4 Synthesis of BNNR 40413.5 Edge Passivation of BNNR 40513.6 Doping of BNNR 40613.7 Computational Details 40713.8 Results and Discussion 40913.10 Summary 41814 Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting‑Edge Electron Spin Research 429R. Bhattacharya14.1 Introduction 43014.2 Understanding Spintronics: Types 43014.3 Spintronic Materials and Devices 43114.4 Manipulating Spin–Orbit Coupling 44514.5 Spin Transport and Injection 44714.6 Spintronic Memory Devices 45514.7 Challenges and Future Directions 46014.8 Mathematical Consideration of Spintronics 46514.9 Conclusions 46915 Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints 475Pankaj Bhambri and Alex Khang15.1 Introduction 47615.2 Overview of Ultra-Nanoscale Design 47715.3 Performance Optimization in Ultra-Nanoscale Applications 48115.4 Nanomaterials in Ultra-Nanoscale Technologies 48515.5 Design Techniques with Logical Schematics and Characteristics 48915.6 Complex Limitations in the Ultra-Nanoscale Realm 49015.7 Manufacturing Challenges and Solutions 49415.8 Ethical Considerations in Ultra-Nanoscale Technologies 49715.9 Real-World Case Studies and Examples 49815.10 Conclusion 50116 Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications 509Ekta Jolly and Vijay Kumar Sharma16.1 Introduction 51016.2 CNT Fundamentals 51016.3 CNTFET Modeling Approaches 51516.4 CNTFET-Based Circuits 51916.5 Conclusion 535References 535Index 541

Vijay Kumar Sharma, PhD is an assistant professor in the School of Electronics and Communication Engineering at Shri Mata Vaishno Devi University. He is published widely in journals and conferences of repute and has authored many book chapters and patents. His research interests are in the area of low-power circuit design.

• Preface xvii1 Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity 1Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh1.1 Introduction 21.2 FinFET Technology 41.3 Device Variability 61.4 Junctionless Transistors 101.5 Global TCAD Solutions 181.6 Simulation Methodology 211.7 Findings and Conversations 221.8 Conclusion 372 Nanotechnology and Applications 45Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary2.1 Introduction 462.2 What Makes Nanotechnology Work 48\2.3 Preparation Method 502.4 Classification of Nanoparticles (NPs) 512.5 Applications of Nanotechnology 522.6 Future Prospect 592.7 Conclusion 603 Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage 69Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram3.1 Introduction 703.2 Previous Literature 743.3 Leakage Reduction Techniques 763.4 Architecture and Functioning of Different SRAM Cell 773.5 SRAM Cell: Various Performance Parameters 823.6 The Proposed 8-T SRAM Cell 863.7 Results and Discussion 883.8 Conclusion 964 Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics 103Navneet Kumar and Himanshu Yadav4.1 Introduction 1044.2 Principle of Fingerprint Detection 1054.3 Techniques for LFPs Analysis 1064.4 Nanotechnology in Forensic Science 1104.5 Discussion 1194.6 Conclusion 1205 Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor 129Kajal and Vijay Kumar Sharma5.1 Introduction 1305.2 Evolution of Transistor Technology 1335.3 Advances in Transistor Design 1405.4 Challenges in Silicon Semiconductor Technology 1435.5 Beyond Silicon: New Materials and Technologies 1485.6 Quantum and Molecular Electronics 1515.7 Advanced Device Concept 1525.8 Conclusion 1556 EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications 165Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima6.1 Introduction 1666.2 Types of Voltage Level Shifters 1696.3 Performance Analysis of Start of Art Level Shifters 1836.4 Conclusion 1857 Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field 191Rubby Mahajan and Ram Prakash7.1 Introduction 1917.2 2D and 3D Materials 1927.3 Multigates 1947.4 Carbon Nanotubes 1987.5 Graphene Nanoribbon (GNRs) 2077.6 Tunnel Transistor 2117.7 Junctionless Transistor 2137.8 Concept of Single Electron Idea 2177.9 Fundamental Principles of Spintronics 2197.10 Future Prospects 2218 Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications 229Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala8.1 Introduction 2308.2 GDI- and CMOS-Based Logic Circuits 2328.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits 2378.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications 2498.5 Conclusion 2619 TFET Fundamentals: A Gateway to Nanoscale Electronics 267Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal9.1 Introduction 2689.2 Fundamentals of TFET 2709.3 Techniques for Enhancing Performance 2769.4 Application in Biosensor 2809.5 Significance of TFET in Advancing Nanoscale Electronics 2869.6 Challenges and Future Outlook 2879.7 Conclusion 28810 Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures 297Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram10.1 Introduction 29810.2 In-Memory Computing: Enhancing Data Processing Efficiency 30210.3 Comparing Traditional Computing Architecture with In-Memory Computing 30310.4 Applications of IMC 30510.5 Types of Memory Used in IMC 30710.6 Operations of 6T-SRAM 31110.7 Architecture of SRAM-Based IMC 31310.8 Comparative Analysis of IMC Architecture Using Different Memory Types 31410.9 Design Challenges with SRAM Based IMC 32510.10 Conclusion 32911 The Tunnel FET: Fundamentals, Calibration, and Simulation 333Nisha Yadav, Sunil Jadav and Gaurav Saini11.1 Need of Tunnel FETs 33411.2 Origin of Tunnel FETs 33611.3 TFET Structure and Working Principle 33611.4 Performance Parameters 34011.5 The Development of TFET Technology 34211.6 Calibration 34911.7 Simulation of DG-TFET 35011.8 Challenges for TFET 35311.9 Conclusion 35412 The Junctionless Device 363Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey12.1 Introduction 36312.2 Qualitative Behavior of JLFETs 36612.3 Electrical Characteristics of JLFET 37412.4 Design Constraints for Junctionless Devices 37512.5 Classification of JLFETs 37812.6 Status of Model Formulation for JLFETs 38412.7 Applications of JLFETs 38512.8 Simulation of JLFETs 38612.9 Conclusion 39013 Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping 395Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal13.1 Introduction 39613.2 Significance of Boron Nitride Nanoribbons 39913.3 Techniques for Synthesis of h-BN 40013.4 Synthesis of BNNR 40413.5 Edge Passivation of BNNR 40513.6 Doping of BNNR 40613.7 Computational Details 40713.8 Results and Discussion 40913.10 Summary 41814 Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting‑Edge Electron Spin Research 429R. Bhattacharya14.1 Introduction 43014.2 Understanding Spintronics: Types 43014.3 Spintronic Materials and Devices 43114.4 Manipulating Spin–Orbit Coupling 44514.5 Spin Transport and Injection 44714.6 Spintronic Memory Devices 45514.7 Challenges and Future Directions 46014.8 Mathematical Consideration of Spintronics 46514.9 Conclusions 46915 Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints 475Pankaj Bhambri and Alex Khang15.1 Introduction 47615.2 Overview of Ultra-Nanoscale Design 47715.3 Performance Optimization in Ultra-Nanoscale Applications 48115.4 Nanomaterials in Ultra-Nanoscale Technologies 48515.5 Design Techniques with Logical Schematics and Characteristics 48915.6 Complex Limitations in the Ultra-Nanoscale Realm 49015.7 Manufacturing Challenges and Solutions 49415.8 Ethical Considerations in Ultra-Nanoscale Technologies 49715.9 Real-World Case Studies and Examples 49815.10 Conclusion 50116 Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications 509Ekta Jolly and Vijay Kumar Sharma16.1 Introduction 51016.2 CNT Fundamentals 51016.3 CNTFET Modeling Approaches 51516.4 CNTFET-Based Circuits 51916.5 Conclusion 535References 535Index 541