Damien Querlioz, University of Paris-Sud, Orsay, France. Philippe Dollfus, University of Paris-Sud, Orsay, France.

Select Guide Rating

• Symbols ixAbbreviations xiiiIntroduction xvAcknowledgements xxiChapter 1. Theoretical Framework of Quantum Transport in Semiconductors and Devices 11.1. The fundamentals: a brief introduction to phonons, quasi-electrons and envelope functions 21.2. The semi-classical approach of transport 111.3. The quantum treatment of envelope functions 161.4. The two main problems of quantum transport 29Chapter 2. Particle-based Monte Carlo Approach to Wigner-Boltzmann Device Simulation 572.1. The particle Monte Carlo technique to solve the BTE 592.2. Extension of the particle Monte Carlo technique to the WBTE: principles 712.3. Simple validations via two typical cases 832.4. Conclusion 86Chapter 3. Application of the Wigner Monte Carlo Method to RTD, MOSFET and CNTFET 893.1. The resonant tunneling diode (RTD) 903.2. The double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) 993.3. The carbon nanotube field-effect transistor (CNTFET) 1343.4. Conclusion 148Chapter 4. Decoherence and Transition from Quantum to Semi-classical Transport 1514.1. Simple illustration of the decoherence mechanism 1524.2. Coherence and decoherence of Gaussian wave packets in GaAs 1574.3. Coherence and decoherence in RTD: transition between semi-classical and quantum regions 1714.4. Quantum coherence and decoherence in DG-MOSFET 1754.5. Conclusion 180Conclusion 183Appendix A. Average Value of Operators in the Wigner Formalism 187Appendix B. Boundaries of the Wigner Potential 189Appendix C. Hartree Wave Function 191Appendix D. Asymmetry Between Phonon Absorption and Emission Rates 193Appendix E. Quantum Brownian Motion 195Appendix F. Purity in the Wigner formalism 201Appendix G. Propagation of a Free Wave Packet Subject to Quantum Brownian Motion 203Appendix H. Coherence Length at Thermal Equilibrium 205Bibliography 207Index 241

Damien Querlioz, University of Paris-Sud, Orsay, France. Philippe Dollfus, University of Paris-Sud, Orsay, France.

Select Guide Rating

• Symbols ixAbbreviations xiiiIntroduction xvAcknowledgements xxiChapter 1. Theoretical Framework of Quantum Transport in Semiconductors and Devices 11.1. The fundamentals: a brief introduction to phonons, quasi-electrons and envelope functions 21.2. The semi-classical approach of transport 111.3. The quantum treatment of envelope functions 161.4. The two main problems of quantum transport 29Chapter 2. Particle-based Monte Carlo Approach to Wigner-Boltzmann Device Simulation 572.1. The particle Monte Carlo technique to solve the BTE 592.2. Extension of the particle Monte Carlo technique to the WBTE: principles 712.3. Simple validations via two typical cases 832.4. Conclusion 86Chapter 3. Application of the Wigner Monte Carlo Method to RTD, MOSFET and CNTFET 893.1. The resonant tunneling diode (RTD) 903.2. The double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) 993.3. The carbon nanotube field-effect transistor (CNTFET) 1343.4. Conclusion 148Chapter 4. Decoherence and Transition from Quantum to Semi-classical Transport 1514.1. Simple illustration of the decoherence mechanism 1524.2. Coherence and decoherence of Gaussian wave packets in GaAs 1574.3. Coherence and decoherence in RTD: transition between semi-classical and quantum regions 1714.4. Quantum coherence and decoherence in DG-MOSFET 1754.5. Conclusion 180Conclusion 183Appendix A. Average Value of Operators in the Wigner Formalism 187Appendix B. Boundaries of the Wigner Potential 189Appendix C. Hartree Wave Function 191Appendix D. Asymmetry Between Phonon Absorption and Emission Rates 193Appendix E. Quantum Brownian Motion 195Appendix F. Purity in the Wigner formalism 201Appendix G. Propagation of a Free Wave Packet Subject to Quantum Brownian Motion 203Appendix H. Coherence Length at Thermal Equilibrium 205Bibliography 207Index 241

Damien Querlioz, University of Paris-Sud, Orsay, France. Philippe Dollfus, University of Paris-Sud, Orsay, France.

Select Guide Rating

• Symbols ixAbbreviations xiiiIntroduction xvAcknowledgements xxiChapter 1. Theoretical Framework of Quantum Transport in Semiconductors and Devices 11.1. The fundamentals: a brief introduction to phonons, quasi-electrons and envelope functions 21.2. The semi-classical approach of transport 111.3. The quantum treatment of envelope functions 161.4. The two main problems of quantum transport 29Chapter 2. Particle-based Monte Carlo Approach to Wigner-Boltzmann Device Simulation 572.1. The particle Monte Carlo technique to solve the BTE 592.2. Extension of the particle Monte Carlo technique to the WBTE: principles 712.3. Simple validations via two typical cases 832.4. Conclusion 86Chapter 3. Application of the Wigner Monte Carlo Method to RTD, MOSFET and CNTFET 893.1. The resonant tunneling diode (RTD) 903.2. The double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) 993.3. The carbon nanotube field-effect transistor (CNTFET) 1343.4. Conclusion 148Chapter 4. Decoherence and Transition from Quantum to Semi-classical Transport 1514.1. Simple illustration of the decoherence mechanism 1524.2. Coherence and decoherence of Gaussian wave packets in GaAs 1574.3. Coherence and decoherence in RTD: transition between semi-classical and quantum regions 1714.4. Quantum coherence and decoherence in DG-MOSFET 1754.5. Conclusion 180Conclusion 183Appendix A. Average Value of Operators in the Wigner Formalism 187Appendix B. Boundaries of the Wigner Potential 189Appendix C. Hartree Wave Function 191Appendix D. Asymmetry Between Phonon Absorption and Emission Rates 193Appendix E. Quantum Brownian Motion 195Appendix F. Purity in the Wigner formalism 201Appendix G. Propagation of a Free Wave Packet Subject to Quantum Brownian Motion 203Appendix H. Coherence Length at Thermal Equilibrium 205Bibliography 207Index 241