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Nonvolatile Memory and Selector Devices, 2 Volumes

Technology and Applications

AvWritam Banerjee

Inbunden, Engelska, 2026

3 599 kr

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Beskrivning

An introduction to foundational memory technology Nonvolatile memory devices have become an ubiquitous component of consumer technology, appearing in products including smartphones, tablets and notebooks, and many more. They enable the high-speed permanent storage and readout of data with high reliability and low energy consumption. The growing incorporation of emerging materials, such as phase-change and two-dimensional materials, promise to further improve these devices and increase their technological reach. Nonvolatile Memory and Selector Devices offers a hands-on overview of these devices and their applications, with a focus on those employing novel materials. It strongly emphasizes so-called selectors, the nanostructures whose intricate design is the basis for all advanced memory devices. Its emphasis on practical tools makes it a must-have for engineers and researchers alike. Nonvolatile Memory and Selector Devices readers will also find: Devices with immediate potential for mass-fabrication using existing facilitiesAn up-to-the-minute analysis of current and emerging researchChapters authored by high-profile researchers from academia and industry alikeNonvolatile Memory and Selector Devices is ideal for all researchers and early-career professionals in research or development, looking to develop an understanding of this critical set of electronic components.

Produktinformation

Utgivningsdatum:2026-07-01
Mått:170 x 244 x undefined mm
Format:Inbunden
Språk:Engelska
Antal sidor:880
Förlag:Wiley-VCH Verlag GmbH
ISBN:9783527353996

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Mer om författaren

Writam Banerjee, PhD, is currently affiliated with the Centre for Semiconductor Design and Technology (CSDT), Indian Institute of Technology Roorkee. He previously served as Principal Engineer in Technology Development for Emerging Nonvolatile Memories at GlobalFoundries, Dresden, Germany, beginning in 2021. Prior to his industry appointment, Dr. Banerjee held several academic positions over more than a decade and has authored over 100 peer-reviewed scientific publications.

Innehållsförteckning

Volume 1Preface xvAcknowledgment xixPart I Introduction to Nonvolatile Memory 11 Introduction 3Adnan Mehonic and Fernando Leonel Aguirre1.1 Static Random Access Memory (SRAM) 51.2 Dynamic Random Access Memory (DRAM) 61.3 Nonvolatile Memory (NVM) 81.4 Performance Requirements 101.5 Emerging NVMs 131.6 Magnetic RAM (MRAM) 131.7 Phase-Change Memory (PCM) 151.8 Ferroelectric Random Access Memory (FeRAM) 151.9 Resistive Random Access Memory (RRAM) 161.10 Comparison Between Different Emerging Nonvolatile Memories 172 3DNAND Flash Memories: Technological Evolution and Prospective Applications 25David Gianluigi Refaldi, Gerardo Malavena, Christian Monzio Compagnoni, and Alessandro Sottocornola Spinelli2.1 Current 3D NAND Flash Technology 252.2 Technology Evolution and Scaling 342.3 Challenges and Future Prospects of 3D NAND Flash 382.4 Emerging Applications 433 Reliability Challenges of NAND Flash Memory in Harsh Environments 53Biswajit Ray and Mondol Anik Kumar3.1 Introduction 533.2 Fundamentals on 3-D NAND Flash 533.3 TID Effects on 3-D NAND Array 573.4 Single-Event Effects on 3-D NAND Array 673.5 TID Effects Mitigation 683.6 TID Effects on the NAND Peripheral Circuitry 733.7 Conclusion 764 Two-Dimensional Materials for Future Transistors 83Xudong Zhuang, Jiazheng Chen, Arijit Sarkar, and Tania Roy4.1 2D Materials for Nanoelectronics 834.2 Memtransistor Based on 2D Materials 884.3 2D Spintronics 904.4 Phototransistors 924.5 Synapses for Neuromorphic Computing 964.6 Beyond Silicon 100Part II Nonvolatile Memory Based on Various Mechanisms 1175 Phase-Change Memory 119Anna Lisa Serra and Gabriele Navarro5.1 Phase-Change Materials and Phase-Change Mechanism 1195.2 Phase-Change Memory Devices 1245.3 PCM Present Applications 1305.4 Phase-Change Memory Challenges 1336 Magnetic Random Access Memory: Past, Present, and Future 149Hasibur Rahaman, Ramu Maddu, and S.N. Piramanayagam6.1 Introduction 1496.2 Memory Architecture 1526.3 Evolution of Magnetic Memory 1536.4 MRAMWriting 1546.5 MRAM Storing 1686.6 MRAM Reading 1736.7 Summary and Outlook 1767 HfO2 in Ferroelectric Devices Key Physics and Critical Challenges 189Alireza Kashir7.1 Introduction 1897.2 Ferroelectric Properties: A Short Overview 1907.3 Basics of HfO2: Crystal Structure and Electronic and Electrical Properties 1937.4 Basics of HfO2: Origin of Ferroelectricity 1957.5 Ferroelectric HfO2 Thin Film: Key Parameters 1987.6 HfO2-Based Ferroelectric Device: Current Challenges 2067.7 Summary 2118 Programmable Read-Only Memory (PROM) 221Daphne Chen, E-Ray Hsieh, and Yifu Huang8.1 Introduction 2218.2 PROM Technology in Industry 2318.3 Emerging Reprogrammable PROM 2398.4 Conclusion 2479 NRAM: A Disruptive Carbon-Nanotube Nonvolatile Resistance-Change Memory 253David C. Gilmer, Harry Luan, Jo Luo, and Rahul Sen9.1 Introduction 2539.2 What Are Carbon Nanotubes (CNT) 2539.3 From Raw CNT Materials to Semiconductor Grade 2559.4 CMOS-Compatible NRAM Technology 2599.5 NRAM Device Operation and Electrical Characteristics 2639.6 NRAM Switching and Conduction Mechanisms 2729.7 NRAM-Based Applications 2759.8 Conclusion and Outlook 27710 Photonic Nonvolatile Memory Devices 283Bassem Tossoun10.1 Introduction 28310.2 Device Discussion 28510.3 Summary 309Part III Redox-based Emerging Nonvolatile Memory Devices 31311 Conductive Bridge Random Access Memory (CBRAM) Devices: Materials, Filament Scaling, and Performance 315Writam Banerjee11.1 Introduction 31511.2 The Art of Resistive Switching 31711.3 Fabrication of CBRAM 33311.4 The Ultimate Scaling 34211.5 Performance Benchmarking 34411.6 Summary and Future Scope of Research 34512 Metal–Oxide Resistive Random-Access Memory Technology: A Perspective on the Challenges and Opportunities 355Bhaswar Chakrabarti, Sourodeep Roy, Shubham R. Pande, and Masud Rana Sk12.1 Introduction 35612.2 Overview of RRAM Technology 35812.3 Applications of RRAMs 37112.4 Conclusion 37913 Modeling and HRRAM 389Philippe Blaise13.1 Introduction 38913.2 Atomistic and TCAD Simulations 39113.3 Resistive RAM Physics 39213.4 Metallic Clusters 39513.5 Oxide Thermochemistry 39813.6 Hybrid RRAM 40513.7 Multiscale Strategy 40713.8 Concluding Remarks 409References 409Volume 2Preface xvAcknowledgment xix14 Two-Dimensional (2D) Materials for Scalable Resistive Memory Devices 413Fei Hui, Xin Liu, Conghui Zhang, Yuchen Li, Yuan Yu, and Peisong Liu15 Reliability and Variability Analysis of Resistive Switching Memory Devices 445Nagarajan Raghavan16 Productization of ReRAM, from Concept to Market 473Gabriel Molas, Lucas Reganaz, Bastien Giraud, Yvain Thonnart, Giuseppe Piccolboni, Alessandro Bricalli, Mario Pallo, Louis Hutin, Elisa Vianello, Damien Deleruyelle, and Quentin RafhayPart IV Selector Devices, and Characterization Techniques 50117 Electrical Characterization and Compact Modeling of HfO2-Based Complementary Resistive Switching Devices 503Mercedes Saludes-Tapia, Samuel Poblador, Francesca Campabadal, Jordi Suñé, Mireia Bargalló González, and Enrique Miranda18 Switching Dynamics of Ag- and Cu-based Diffusive Memristors 531Solomom Amsalu Chekol and Susanne Hoffmann-Eifert19 Amorphous Chalcogenide-Based Threshold Switches for Selector and Memory Applications 559Taras Ravsher, Sergiu Clima, Daniele Garbin, and Robin Degraeve20 Strategies for the Nanoscale Characterization of Volatile and Nonvolatile Filaments 595Md Ashiqur Rahman Laskar, Srijan Chakrabarti, William A. Hubbard, and Umberto CelanoPart V Applications of Emerging Nonvolatile Memory Devices 62521 Emerging Devices for Neuromorphic Sensing and Computing 627Qi Liu, Xumeng Zhang, and Chao Li22 Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications 653Wooseok Choi, Mamidala Saketh Ram, Donato F. Falcone, Tommaso Stecconi, Davide G. F. Lombardo, Antonio La Porta, Folkert Horst, Daniel Jubin, Valeria Bragaglia, and Bert Jan Offrein23 Accelerating Algorithms Using Emerging Nonvolatile Memory Subsystems for Edge Computing 701Yimin Wang and Xuanyao Fong24 Hardware Security Using Emerging Nonvolatile Memories 725Kunal Kranti Das, Arshid Nisar, Gokulnath Rajendran, Furqan Zahoor, Brajesh Kumar Kaushik, and Anupam Chattopadhyay25 Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond 757Mohit Kumar and Hyungtak Seo26 Adapting Emerging Nonvolatile Memristor Technology for RF Applications 771Jayakrishnan Purushothama, Yuan Ding, Marc Desmulliez, George Goussetis, Arnaud Vena, Rida Gadhafi, and Etienne PerretIndex 811