Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981-1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at the Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and the Chinese Academy of Science (Beijing, PRC) since 2016 .Prof. Deleonibus is distinguished research director of the CEA since 2002, distinguished lecturer at IEEE since 2004, fellow of the IEEE since 2006, and fellow of the Electrochemical Society since 2015. He was awarded the titles of Chevalier de l’Ordre National du Mérite (2004) and Chevalier de l’Ordre des Palmes Académiques (2011), as well as the 2005 Grand Prix de l’Académie des Technologies. He is a member of the ITRS since 1998, the European Research Council Panel since 2007, and the Nanosciences Foundation Board of Trustees since 2007. He was associate editor of the IEEE Transactions on Electron Devices (2008-2014) and a member of the IEEE Electron Devices Society Board of Governors (2009-2011 and 2012-2014), where he has been reelected for 2016-2018. Currently he is secretary of IEEE EDS (2016-2017) and chair of IEEE EDS Region 8 SRC (2015-2016).

"A timely book that showcases some of the most important advances in nanodevices and nanofabrication, written by world-renowned experts."Prof. H.-S. Philip Wong, Stanford University, USA"This seven-chapter book reviews important new trends in nanotechnology and nanodevices, ranging from single-ion implantation and two-dimensional materials, such as graphene, to nanofabrication with a scanning probe microscope. The second part of the book deals with unconventional approaches to scaling nanoscale CMOS devices and to reducing device variability. Taken together, the book provides a wealth of information for graduate students and nanotechnology researchers, as well as a good insight into the future developments for engineers involved with nanosystem design and fabrication."Prof. George Celler, Rutgers University, USA"In this book, the authors address various advanced nanofabrication techniques and device issues for nano-CMOS extension. The topics are timely and their description is well balanced between innovation and practicality, as the authors evaluate each technique on the basis of the current CMOS technology. I strongly recommend the book to graduate students, researchers, and engineers in the industry and academia."Prof. Byung Gook Park, Seoul National University, Korea

• Introduction: Will new materials, fabrication and architecture schemes emerge for CMOS survival?. Deterministic single-ion implantation method for quantum processing in silicon and diamond. Graphene and two-dimensional materials : extending silicon technology for the future? Nanofabrication using scanning probe microscopes. High-k dielectric scaling for nano CMOS technology. Nanometer scale epitaxial growth of group IV semiconductors. TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. Nanowires for CMOS and diversifications.

Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981-1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at the Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and the Chinese Academy of Science (Beijing, PRC) since 2016 .Prof. Deleonibus is distinguished research director of the CEA since 2002, distinguished lecturer at IEEE since 2004, fellow of the IEEE since 2006, and fellow of the Electrochemical Society since 2015. He was awarded the titles of Chevalier de l’Ordre National du Mérite (2004) and Chevalier de l’Ordre des Palmes Académiques (2011), as well as the 2005 Grand Prix de l’Académie des Technologies. He is a member of the ITRS since 1998, the European Research Council Panel since 2007, and the Nanosciences Foundation Board of Trustees since 2007. He was associate editor of the IEEE Transactions on Electron Devices (2008-2014) and a member of the IEEE Electron Devices Society Board of Governors (2009-2011 and 2012-2014), where he has been reelected for 2016-2018. Currently he is secretary of IEEE EDS (2016-2017) and chair of IEEE EDS Region 8 SRC (2015-2016).

"A timely book that showcases some of the most important advances in nanodevices and nanofabrication, written by world-renowned experts."Prof. H.-S. Philip Wong, Stanford University, USA"This seven-chapter book reviews important new trends in nanotechnology and nanodevices, ranging from single-ion implantation and two-dimensional materials, such as graphene, to nanofabrication with a scanning probe microscope. The second part of the book deals with unconventional approaches to scaling nanoscale CMOS devices and to reducing device variability. Taken together, the book provides a wealth of information for graduate students and nanotechnology researchers, as well as a good insight into the future developments for engineers involved with nanosystem design and fabrication."Prof. George Celler, Rutgers University, USA"In this book, the authors address various advanced nanofabrication techniques and device issues for nano-CMOS extension. The topics are timely and their description is well balanced between innovation and practicality, as the authors evaluate each technique on the basis of the current CMOS technology. I strongly recommend the book to graduate students, researchers, and engineers in the industry and academia."Prof. Byung Gook Park, Seoul National University, Korea

• Introduction: Will new materials, fabrication and architecture schemes emerge for CMOS survival?. Deterministic single-ion implantation method for quantum processing in silicon and diamond. Graphene and two-dimensional materials : extending silicon technology for the future? Nanofabrication using scanning probe microscopes. High-k dielectric scaling for nano CMOS technology. Nanometer scale epitaxial growth of group IV semiconductors. TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. Nanowires for CMOS and diversifications.

Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981-1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at the Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and the Chinese Academy of Science (Beijing, PRC) since 2016 .Prof. Deleonibus is distinguished research director of the CEA since 2002, distinguished lecturer at IEEE since 2004, fellow of the IEEE since 2006, and fellow of the Electrochemical Society since 2015. He was awarded the titles of Chevalier de l’Ordre National du Mérite (2004) and Chevalier de l’Ordre des Palmes Académiques (2011), as well as the 2005 Grand Prix de l’Académie des Technologies. He is a member of the ITRS since 1998, the European Research Council Panel since 2007, and the Nanosciences Foundation Board of Trustees since 2007. He was associate editor of the IEEE Transactions on Electron Devices (2008-2014) and a member of the IEEE Electron Devices Society Board of Governors (2009-2011 and 2012-2014), where he has been reelected for 2016-2018. Currently he is secretary of IEEE EDS (2016-2017) and chair of IEEE EDS Region 8 SRC (2015-2016).

"A timely book that showcases some of the most important advances in nanodevices and nanofabrication, written by world-renowned experts."Prof. H.-S. Philip Wong, Stanford University, USA"This seven-chapter book reviews important new trends in nanotechnology and nanodevices, ranging from single-ion implantation and two-dimensional materials, such as graphene, to nanofabrication with a scanning probe microscope. The second part of the book deals with unconventional approaches to scaling nanoscale CMOS devices and to reducing device variability. Taken together, the book provides a wealth of information for graduate students and nanotechnology researchers, as well as a good insight into the future developments for engineers involved with nanosystem design and fabrication."Prof. George Celler, Rutgers University, USA"In this book, the authors address various advanced nanofabrication techniques and device issues for nano-CMOS extension. The topics are timely and their description is well balanced between innovation and practicality, as the authors evaluate each technique on the basis of the current CMOS technology. I strongly recommend the book to graduate students, researchers, and engineers in the industry and academia."Prof. Byung Gook Park, Seoul National University, Korea

• Introduction: Will new materials, fabrication and architecture schemes emerge for CMOS survival?. Deterministic single-ion implantation method for quantum processing in silicon and diamond. Graphene and two-dimensional materials : extending silicon technology for the future? Nanofabrication using scanning probe microscopes. High-k dielectric scaling for nano CMOS technology. Nanometer scale epitaxial growth of group IV semiconductors. TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. Nanowires for CMOS and diversifications.