Andreas Schenk – författare

Fritz Nathan (1891–1960) zählte zu den aufstrebenden Architekten im Deutschland der Zwanzigerjahre. Mit dem Neuen Jüdischen Friedhof in Frankfurt/Main, seinen Warenhäusern und Industriebauten schuf er signifikante Beispiele des Neuen Bauens. Doch dann führte die nationalsozialistische Diktatur zum jähen Ende der Karriere des jüdischen Architekten. 1940 emigrierte er in die USA und ließ sich in New York nieder. Nach schwierigen Anfängen konnte er in seinem Beruf wieder Fuß fassen. Die längst fällige Würdigung Nathans weist die herausragende Bedeutung seines Beitrags zum Neuen Bauen in Deutschland sowie zur modernen Synagogenarchitektur in den USA nach.

Fritz Nathan (1891–1960) zählte zu den aufstrebenden Architekten im Deutschland der Zwanzigerjahre. Mit dem Neuen Jüdischen Friedhof in Frankfurt/Main, seinen Warenhäusern und Industriebauten schuf er signifikante Beispiele des Neuen Bauens. Doch dann führte die nationalsozialistische Diktatur zum jähen Ende der Karriere des jüdischen Architekten. 1940 emigrierte er in die USA und ließ sich in New York nieder. Nach schwierigen Anfängen konnte er in seinem Beruf wieder Fuß fassen. Die längst fällige Würdigung Nathans weist die herausragende Bedeutung seines Beitrags zum Neuen Bauen in Deutschland sowie zur modernen Synagogenarchitektur in den USA nach.

Keine ausführliche Beschreibung für "Grundlagen der Halbleiterphysik" verfügbar.

Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys­ ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam­ ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.

Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys­ ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam­ ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.

Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys­ ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam­ ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.