Dimitri Vvedensky – författare

Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss non-linear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of semiconductor devices.

Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss non-linear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of semiconductor devices.

Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to this title are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to this title are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis?t is the formation of coherent thr- dimensional(3D)islandsduringtheStranski-Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also exhibit this phenomenon. When the 3D islands are embedded within epitaxiallayers of a material that has a wider band gap,the carriers within the islands are con?ned by the potential barriers that surround each island, forming an array of quantum dots (QDs). Such structures have been produced for both basic physics studies and device fab- cation, including QD lasers and light-emitting diodes (LEDs) operating at the c- mercially important wavelengths of 1.3 m and 1.55 m.On a more speculative level, QD ensembles have been suggested as a possible pathway for the solid-state implementation of a quantum computer. Although some of the principles of qu- tum computing have been veri?ed by other means, the practical utilization of this new computingparadigmmay warrant some sort of solid state architecture. QDs are seen as possible components of such a computer, as evidenced by a number of papersappearingintheliteratureproposingQD-basedarchitecturesandworkshops that are being organized to explore these possibilities.

The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis?t is the formation of coherent thr- dimensional(3D)islandsduringtheStranski-Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also exhibit this phenomenon. When the 3D islands are embedded within epitaxiallayers of a material that has a wider band gap,the carriers within the islands are con?ned by the potential barriers that surround each island, forming an array of quantum dots (QDs). Such structures have been produced for both basic physics studies and device fab- cation, including QD lasers and light-emitting diodes (LEDs) operating at the c- mercially important wavelengths of 1.3 m and 1.55 m.On a more speculative level, QD ensembles have been suggested as a possible pathway for the solid-state implementation of a quantum computer. Although some of the principles of qu- tum computing have been veri?ed by other means, the practical utilization of this new computingparadigmmay warrant some sort of solid state architecture. QDs are seen as possible components of such a computer, as evidenced by a number of papersappearingintheliteratureproposingQD-basedarchitecturesandworkshops that are being organized to explore these possibilities.