Erwin Kasper – författare

Principles of Electron Optics

Principles of Electron Optics

This is a complete handbook and reference volume which covers everything that one needs to know about electron optics. It is a comprehensive coverage of theoretical background and modern computing methods. It contains a detailed and unique account of numerical methods and an extensive bibliography.

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

The three volumes in the PRINCIPLES OF ELECTRON OPTICS Series constitute the first comprehensive treatment of electron optics in over forty years. While Volumes 1 and 2 are devoted to geometrical optics, Volume 3 is concerned with wave optics and effects due to wave length. Subjects covered include:Derivation of the laws of electron propagation from SchrUdinger''s equationImage formation and the notion of resolutionThe interaction between specimens and electronsImage processingElectron holography and interferenceCoherence, brightness, and the spectral functionTogether, these works comprise a unique and informative treatment of the subject. Volume 3, like its predecessors, will provide readers with both a textbook and an invaluable reference source.

Volume one of Principles of Electron Optics: Basic Geometrical Optics, Second Edition, explores the geometrical optics needed to analyze an extremely wide range of instruments: cathode-ray tubes; the family of electron microscopes, including the fixed-beam and scanning transmission instruments, the scanning electron microscope and the emission microscope; electron spectrometers and mass spectrograph; image converters; electron interferometers and diffraction devices; electron welding machines; and electron-beam lithography devices.

The book provides a self-contained, detailed, modern account of electron optics for anyone involved with particle beams of modest current density in the energy range up to a few mega-electronvolts. You will find all the basic equations with their derivations, recent ideas concerning aberration studies, extensive discussion of the numerical methods needed to calculate the properties of specific systems and guidance to the literature of all the topics covered. A continuation of these topics can be found in volume two, Principles of Electron Optics:�Applied Geometrical Optics.

The book is intended for postgraduate students and teachers in physics and electron optics, as well as researchers and scientists in academia and industry working in the field of electron optics, electron and ion microscopy and nanolithography.

Offers a fully revised and expanded new edition based on the latest research developments in electron optics Written by the top experts in the field Covers every significant advance in electron optics since the subject originated Contains exceptionally complete and carefully selected references and notes Serves both as a reference and text

Volume one of Principles of Electron Optics: Basic Geometrical Optics, Second Edition, explores the geometrical optics needed to analyze an extremely wide range of instruments: cathode-ray tubes; the family of electron microscopes, including the fixed-beam and scanning transmission instruments, the scanning electron microscope and the emission microscope; electron spectrometers and mass spectrograph; image converters; electron interferometers and diffraction devices; electron welding machines; and electron-beam lithography devices.The book provides a self-contained, detailed, modern account of electron optics for anyone involved with particle beams of modest current density in the energy range up to a few mega-electronvolts. You will find all the basic equations with their derivations, recent ideas concerning aberration studies, extensive discussion of the numerical methods needed to calculate the properties of specific systems and guidance to the literature of all the topics covered. A continuation of these topics can be found in volume two, Principles of Electron Optics: Applied Geometrical Optics.The book is intended for postgraduate students and teachers in physics and electron optics, as well as researchers and scientists in academia and industry working in the field of electron optics, electron and ion microscopy and nanolithography.- Offers a fully revised and expanded new edition based on the latest research developments in electron optics- Written by the top experts in the field- Covers every significant advance in electron optics since the subject originated- Contains exceptionally complete and carefully selected references and notes- Serves both as a reference and text

Principles of Electron Optics: Applied Geometrical Optics, Second Edition gives detailed information about the many optical elements that use the theory presented in Volume 1: electrostatic and magnetic lenses, quadrupoles, cathode-lens-based instruments including the new ultrafast microscopes, low-energy-electron microscopes and photoemission electron microscopes and the mirrors found in their systems, Wien filters and deflectors. The chapter on aberration correction is largely new. The long section on electron guns describes recent theories and covers multi-column systems and carbon nanotube emitters. Monochromators are included in the section on curved-axis systems.

The lists of references include many articles that will enable the reader to go deeper into the subjects discussed in the text.

The book is intended for postgraduate students and teachers in physics and electron optics, as well as researchers and scientists in academia and industry working in the field of electron optics, electron and ion microscopy and nanolithography.

Offers a fully revised and expanded new edition based on the latest research developments in electron optics Written by the top experts in the field Covers every significant advance in electron optics since the subject originated Contains exceptionally complete and carefully selected references and notes Serves both as a reference and text

Principles of Electron Optics: Applied Geometrical Optics, Second Edition gives detailed information about the many optical elements that use the theory presented in Volume 1: electrostatic and magnetic lenses, quadrupoles, cathode-lens-based instruments including the new ultrafast microscopes, low-energy-electron microscopes and photoemission electron microscopes and the mirrors found in their systems, Wien filters and deflectors. The chapter on aberration correction is largely new. The long section on electron guns describes recent theories and covers multi-column systems and carbon nanotube emitters. Monochromators are included in the section on curved-axis systems.The lists of references include many articles that will enable the reader to go deeper into the subjects discussed in the text.The book is intended for postgraduate students and teachers in physics and electron optics, as well as researchers and scientists in academia and industry working in the field of electron optics, electron and ion microscopy and nanolithography.- Offers a fully revised and expanded new edition based on the latest research developments in electron optics- Written by the top experts in the field- Covers every significant advance in electron optics since the subject originated- Contains exceptionally complete and carefully selected references and notes- Serves both as a reference and text

Principles of Electron Optic: Volume Three: Wave Optics, discusses this essential topic in microscopy to help readers understand the propagation of electrons from the source to the specimen, and through the latter (and from it) to the image plane of the instrument. In addition, it also explains interference phenomena, notably holography, and informal coherence theory. This third volume accompanies volumes one and two that cover new content on holography and interference, improved and new modes of image formation, aberration corrected imaging, simulation, and measurement, 3D-reconstruction, and more.

The study of such beams forms the subject of electron optics, which divides naturally into geometrical optics where effects due to wavelength are neglected, with wave optics considered.

Includes authoritative coverage of the fundamental theory behind electron beams Describes the interaction of electrons with solids and the information that can be obtained from electron-beam techniques Addresses recent, relevant research topics, including new content on holography and interference, new modes of image formation, 3D reconstruction and aberration corrected imaging, simulation and measurement

Principles of Electron Optic: Volume Three: Wave Optics, discusses this essential topic in microscopy to help readers understand the propagation of electrons from the source to the specimen, and through the latter (and from it) to the image plane of the instrument. In addition, it also explains interference phenomena, notably holography, and informal coherence theory. This third volume accompanies volumes one and two that cover new content on holography and interference, improved and new modes of image formation, aberration corrected imaging, simulation, and measurement, 3D-reconstruction, and more.The study of such beams forms the subject of electron optics, which divides naturally into geometrical optics where effects due to wavelength are neglected, with wave optics considered.- Includes authoritative coverage of the fundamental theory behind electron beams- Describes the interaction of electrons with solids and the information that can be obtained from electron-beam techniques- Addresses recent, relevant research topics, including new content on holography and interference, new modes of image formation, 3D reconstruction and aberration corrected imaging, simulation and measurement

Principles of Electron Optics: Second Edition, Advanced Wave Optics provides a self-contained, modern account of electron optical phenomena with the Dirac or Schr�dinger equation as a starting point. Knowledge of this branch of the subject is essential to understanding electron propagation in electron microscopes, electron holography and coherence. Sections in this new release include, Electron Interactions in Thin Specimens, Digital Image Processing, Acquisition, Sampling and Coding, Enhancement, Linear Restoration, Nonlinear Restoration - the Phase Problem, Three-dimensional Reconstruction, Image Analysis, Instrument Control, Vortex Beams, The Quantum Electron Microscope, and much more. Includes authoritative coverage of many recent developments in wave electron optics Describes the interaction of electrons with solids and the information that can be obtained from electron-beam techniques Includes new content on multislice optics, 3D reconstruction, Wigner optics, vortex beams and the quantum electron microscope

Principles of Electron Optics: Second Edition, Advanced Wave Optics provides a self-contained, modern account of electron optical phenomena with the Dirac or Schrödinger equation as a starting point. Knowledge of this branch of the subject is essential to understanding electron propagation in electron microscopes, electron holography and coherence. Sections in this new release include, Electron Interactions in Thin Specimens, Digital Image Processing, Acquisition, Sampling and Coding, Enhancement, Linear Restoration, Nonlinear Restoration – the Phase Problem, Three-dimensional Reconstruction, Image Analysis, Instrument Control, Vortex Beams, The Quantum Electron Microscope, and much more.- Includes authoritative coverage of many recent developments in wave electron optics- Describes the interaction of electrons with solids and the information that can be obtained from electron-beam techniques- Includes new content on multislice optics, 3D reconstruction, Wigner optics, vortex beams and the quantum electron microscope

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.