Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Phase Transitions - 1973 is a collection of the proceedings of the Conference on Phase Transitions and Their Applications in Materials Science, held at Pennsylvania State University, Pennsylvania, on May 23-25, 1973. The papers explore some of the practical applications of solid-state phase transitions and consequent precursor property modifications in metals, ceramics, glasses, polymers, macromolecules, and biological systems. Comprised of 41 chapters, this book begins with an introduction to applications of phase transitions in materials science, followed by a syncretist classification of phase transitions. Subsequent chapters discuss phase transitions in materials such as liquid crystals, PLZT ceramics, disordered semiconductors, silver iodide single crystals, and aluminum alloys. The structural aspects of phase transitions are also considered, along with the statistical mechanics of glass transition; thermal expansion and phase transitions in silica; phase transformation of Fe-Mn alloys induced by shock loading; and order-disorder transitions in biopolymers. This monograph will be of interest to physicists and materials scientists.

Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (from solution, melt, or vapor), electroluminescence effects in zinc sulfide crystals, and observations made in the pre-breakdown region in single crystals of cadmium sulfide. Boer and Kummel (1952) describes the pre-breakdown region, under stable and wholly reversible conditions, as being connected with thermal instability. The book notes that the reversibility and repeatability of the phenomena below the breakdown point show that the field effects responsible for the sharp increase in conductance do not damage the crystal. The text also discusses the construction and characteristics of electroluminescent cells, as well as their applications. The book will prove valuable for physico-chemists, technical designers, or engineers whose works are related to instrumentation and solid-state electronics.

Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Phase Transitions - 1973 is a collection of the proceedings of the Conference on Phase Transitions and Their Applications in Materials Science, held at Pennsylvania State University, Pennsylvania, on May 23-25, 1973. The papers explore some of the practical applications of solid-state phase transitions and consequent precursor property modifications in metals, ceramics, glasses, polymers, macromolecules, and biological systems. Comprised of 41 chapters, this book begins with an introduction to applications of phase transitions in materials science, followed by a syncretist classification of phase transitions. Subsequent chapters discuss phase transitions in materials such as liquid crystals, PLZT ceramics, disordered semiconductors, silver iodide single crystals, and aluminum alloys. The structural aspects of phase transitions are also considered, along with the statistical mechanics of glass transition; thermal expansion and phase transitions in silica; phase transformation of Fe-Mn alloys induced by shock loading; and order-disorder transitions in biopolymers. This monograph will be of interest to physicists and materials scientists.

Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (from solution, melt, or vapor), electroluminescence effects in zinc sulfide crystals, and observations made in the pre-breakdown region in single crystals of cadmium sulfide. Boer and Kummel (1952) describes the pre-breakdown region, under stable and wholly reversible conditions, as being connected with thermal instability. The book notes that the reversibility and repeatability of the phenomena below the breakdown point show that the field effects responsible for the sharp increase in conductance do not damage the crystal. The text also discusses the construction and characteristics of electroluminescent cells, as well as their applications. The book will prove valuable for physico-chemists, technical designers, or engineers whose works are related to instrumentation and solid-state electronics.